Reduction of Base Resistance and Increase in Cutoff Frequency of Si Bipolar Transistor Using Rapid Vapor-Phase Doping
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-04-30
著者
-
Kikuchi Tsuneo
Nmij Aist
-
WASHIO Katsuyoshi
Central Research Laboratory, Hitachi, Ltd.
-
Kiyota Yukihiro
Central Research Laboratory, Hitachi Ltd.
-
Kiyota Y
Central Research Laboratory Hitachi Ltd.
-
Kiyota Yukihiro
Central Research Laboratory Hitachi
-
Washio K
Central Research Laboratory Hitachi Ltd.
-
Washio Katsuyoshi
Central Research Laboratory Hitachi Ltd.
-
Kikuchi T
Graduate School Of Engineering Science Osaka University:core Research For Evolutional Science &
-
INADA Taroh
College of Engineering, Hosei University
-
KIKUCHI Toshiyuki
Device Development Center, Hitachi Ltd.
-
Inada Taroh
College Of Engineering Hosei University
関連論文
- P3-8 Calibration of Hydrophone Sensitivity Using Planar Scanning Method : Effect of Nonlinear Propagation(Poster session 3)
- Influence of Ultrasonic Nonlinear Propagation on Hydrophone Calibration Using Two-Transducer Reciprocity Method (Special Issue: Ultrasonic Electronics)
- Ultrasonic Power Measurement by the Radiation Force Balance Method : Experimental Results using Burst Waves and Continuous Waves (Short Note)
- Test Structure and Experimental Analysis of Emitter-Base Reverse Voltage Stress Degradation in Self-Aligned Bipolar Transistors (Special Issue on Microelectronic Test Structure)
- Process and Device Technologies for High Speed Self-Aligned Bipolar Transistors
- High-Speed High-Density Self-Aligned PNP Technology for Low-Power Complementary Bipolar ULSIs
- High-Frequency, Low-Noise Si Bipolar Transistor Fabricated Using Self-Aligned Metal/IDP Technology (Special Issue on High-Frequency/speed Devices in the 21st Century)
- The Role of Hydrogen during Rapid Vapor-Phase Doping Analyzed by FTIR-ATR
- Shallow p-Type Layers in Si by Rapid Vapor-Phase Doping for High-Speed Bipolar and MOS Applications (Special Issue on Ultra-High-Speed LSIs)
- Electron Field Emission from Sulfur Ion Implanted Homoepitaxial Diamond Films(Surfaces, Interfaces, and Films)
- Reduction of Base Resistance and Increase in Cutoff Frequency of Si Bipolar Transistor Using Rapid Vapor-Phase Doping
- Reduction of Base Resistance and Enhancement of Cutoff Frequency of High-Speed Si Bipolar Transistor Using Rapid Vapor-Phase Doping
- HCI-Free Selective Epitaxial SiGe Growth by LPCVD for 80-GHz BiCMOS Production
- DC and AC Performances in Selectively Grown SiGe-Base HBTs (Special Issue on High-Frequency/speed Devices in the 21st Century)
- Low-Temperature Electrical Characteristics of Strained-Si-MOSFETs
- Novel SiGe-on-Insulator Virtual Substrate Fabricated by Self-Melt-Solidification
- Low ACPR Characteristics for WCDMA Applications of SiGe:C HBT Devices with Small Emitter Capacitance(Advanced RF Technologies for Compact Wireless Equipment and Mobile Phones)
- Sticking Configuration of Boron Atoms from B2H6 on Silicon during Rapid Vapor-Phase Doping
- Behavior of Active and Inactive Boron in Si Produced by Vapor-Phase Doping during Subsequent Hydrogen Annealing
- Subquarter-Micrometer PMOSFET's with 50-nm Source and Drain Formed by Rapid Vapor-Phase Doping (RVD) (Special Issue on Quarter Micron Si Device and Process Technologies)
- Ultrasonic Power Measurements by Radiation Force Balance Method : Characteristics of a Conical Absorbing Target.
- Suppression of B Outdiffusion by C Incorporation in Ultra-High-Speed SiGeC HBTs
- Low-Temperature Electrical Characteristics of Strained-Si MOSFETs
- Suppression of B Outdiffusion by C Incorporation in Ultra-High-Speed SiGeC HBTs