Sticking Configuration of Boron Atoms from B2H6 on Silicon during Rapid Vapor-Phase Doping

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概要

• 論文の詳細を見る
• 1998-09-07

著者

• Kiyota Yukihiro

  Central Research Laboratory, Hitachi Ltd.

• Kiyota Yukihiro

  Central Research Laboratory Hitachi

• INADA Taroh

  College of Engineering, Hosei University

• Inada Taroh

  College Of Engineering Hosei University

• TANAKA Hideaki

  College of Engineering, Hosei university

• Tanaka Hideaki

  College Of Engineering Hosei University

関連論文

• Process and Device Technologies for High Speed Self-Aligned Bipolar Transistors
• The Role of Hydrogen during Rapid Vapor-Phase Doping Analyzed by FTIR-ATR
• Shallow p-Type Layers in Si by Rapid Vapor-Phase Doping for High-Speed Bipolar and MOS Applications (Special Issue on Ultra-High-Speed LSIs)
• Reduction of Base Resistance and Increase in Cutoff Frequency of Si Bipolar Transistor Using Rapid Vapor-Phase Doping
• Reduction of Base Resistance and Enhancement of Cutoff Frequency of High-Speed Si Bipolar Transistor Using Rapid Vapor-Phase Doping
• HCI-Free Selective Epitaxial SiGe Growth by LPCVD for 80-GHz BiCMOS Production
• Sticking Configuration of Boron Atoms from B2H6 on Silicon during Rapid Vapor-Phase Doping
• Behavior of Active and Inactive Boron in Si Produced by Vapor-Phase Doping during Subsequent Hydrogen Annealing
• Subquarter-Micrometer PMOSFET's with 50-nm Source and Drain Formed by Rapid Vapor-Phase Doping (RVD) (Special Issue on Quarter Micron Si Device and Process Technologies)

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