The Role of Hydrogen during Rapid Vapor-Phase Doping Analyzed by FTIR-ATR
スポンサーリンク
概要
- 論文の詳細を見る
- 1996-08-26
著者
-
SUZUKI Seiji
明海大学歯学部口腔外科学第2講座
-
Kiyota Yukihiro
Central Research Laboratory, Hitachi Ltd.
-
Kiyota Yukihiro
Central Research Laboratory Hitachi Ltd.
-
Kiyota Yukihiro
Central Research Laboratory Hitachi
-
Suzuki S
Materials Science & Advanced Devices Nhk Science & Technical Research Laboratories
-
SUZUKI Seiji
College of Engineering, Hosei University
-
INADA Taroh
College of Engineering, Hosei University
-
Inada Taroh
College Of Engineering Hosei University
-
Suzuki S
明海大学歯学部口腔外科学第2講座
関連論文
- Eruption cyst with obvious epithelial hyperplasia in an infant
- Ameloblastic Fibro-odontoma Report of a Case and Review of the Japanese Literature
- A Case of Extensive Erythroplakia in the Oral Mucosa
- Papillary Cystadenoma of the Hard Palate : A case report
- Vascular Endothelial Growth Factor and Dendritic Cells in Squamous Cell Carcinoma of the Oral Cavity
- Process and Device Technologies for High Speed Self-Aligned Bipolar Transistors
- Photoconductive Properties of Organic Films Based on Porphine Complex Evaluated with Image Pickup Tubes
- Ultra-High-Sensitivity New Super-HARP Pickup Tube and Its Camera(Recent Progress in Photon Detection Technology)
- Image Pickup from Zinc Phthalocyanine/Bathocuproine Double-Layer Film Using Pickup Tube
- Ultrahigh-Sensitivity Pickup Tube Using 35-μm-Thick HARP Photoconductive Film
- The Role of Hydrogen during Rapid Vapor-Phase Doping Analyzed by FTIR-ATR
- Shallow p-Type Layers in Si by Rapid Vapor-Phase Doping for High-Speed Bipolar and MOS Applications (Special Issue on Ultra-High-Speed LSIs)
- Formation of Black Membrane Using a Microfabricated Orifice
- Reduction of Base Resistance and Increase in Cutoff Frequency of Si Bipolar Transistor Using Rapid Vapor-Phase Doping
- Reduction of Base Resistance and Enhancement of Cutoff Frequency of High-Speed Si Bipolar Transistor Using Rapid Vapor-Phase Doping
- HCI-Free Selective Epitaxial SiGe Growth by LPCVD for 80-GHz BiCMOS Production
- Sticking Configuration of Boron Atoms from B2H6 on Silicon during Rapid Vapor-Phase Doping
- Behavior of Active and Inactive Boron in Si Produced by Vapor-Phase Doping during Subsequent Hydrogen Annealing
- Subquarter-Micrometer PMOSFET's with 50-nm Source and Drain Formed by Rapid Vapor-Phase Doping (RVD) (Special Issue on Quarter Micron Si Device and Process Technologies)
- Desmoplastic Fibroma of the Maxilla