Fabrication of Pd(Zr, Ti)O_3 Microscopic Capacitors by Electron Beam Lithography

スポンサーリンク

概要

• 論文の詳細を見る
• 1997-08-15

著者

• TAKAGI Kazumasa

  Advanced Research Laboratory, Hitachi, Ltd.

• Tarutani Y

  Hitachi Ltd. Saitama Jpn

• Tarutani Yoshinobu

  Advanced Research Laboratory Hitachi Ltd.

• Takagi Kazumasa

  Advanced Research Laboratory Hitachi Ltd.

• Hiratani M

  Central Research Laboratory Hitachi Ltd.

• Hiratani M

  Central Research Laboratory Hitachi Ltd

• Hiratani Masahiko

  Central Research Laboratory Hitachi Ltd.

• Tarutani Y

  Advanced Research Laboratory Hitachi Ltd.

• Takagi K

  Univ. Tokyo Tokyo Jpn

• OKAZAKI Choichiro

  Central Research Laboratory, Hitachi, Ltd

• HASEGAWA Haruhiro

  Advanced Research Laboratory, Hitachi, Ltd.

• SUGII Nobuyuki

  Central Research Laboratory, Hitachi, Ltd.

• Hasegawa Haruhiro

  Advanced Research Laboratory Hitachi Ltd.

• Okazaki Choichiro

  Central Research Laboratory Hitachi Ltd

• Okazaki Choichiro

  Faculty Of Engineering Chiba University

• Okazaki Choichiro

  The Authors Are With Central Research Laboratory Hitachi Ltd.

• Sugii Nobuyuki

  Central Research Laboratory Hitachi Ltd.

• Takagi K

  Institute Of Industrial Science University Of Tokyo

関連論文

• Noise Properties of (Hg_Re_)Ba_2CaCu_2O_y Dc Superconducting Quantum Interference Device on (LaAlO_3)_-(SrAl_Ta_O_3)_ Substrates : Superconductors
• Tetragonal High-T_c Superconductor in the System Ba_2Y(CuGa_x)_3O_
• Circuit Simulation Study for Characterization of High-Temperature Superconducting Sigma-Delta Modulator with 100 GHz Sampling(Special Issue on Superconductor Digital/Analog Circuit Technologies)
• HTS Surface-Modified Junctions with Integrated Ground-Planes for SFQ Circuits(Special Issue on Superconductive Electronics)
• Design of Demultiplexer and Demonstration of the Operation up to 46 GHz(Special Issue on Superconductive Electronics)
• Low-Temperature Annealing Effect on Bi-Sr-Ca-Cu-O Thin Films Prepared by Layer-by-Layer Deposition
• Thin Film Growth of YBa_2Cu_3O_ by ECR Oxygen Plasma Assisted Reactive Evaporation
• Interfacial Reaction of SrRuO_3 Prepared Directly on TiN
• Fabrication of Pd(Zr, Ti)O_3 Microscopic Capacitors by Electron Beam Lithography
• SrRuO_3 Thin Films Grown under Reduced Oxygen Pressure
• Orientation and Crystal Structure of SrTiO_3 Thin Films Prepared by Pulsed Laser Deposition
• Electrical Characteristics of HoBa_2Cu_3O_-La_Ba_Cu_3O_-HoBa_2Cu_3O_ Junctions with Planar-Type Structures
• Resistivity Anomaly Near Room Temperature of Y-Ba-Cu-O and Related Oxides as Created by the Surface Effect of Water
• The Effect of Microwave-Plasma on Decomposition and Oxidation of Ba(THD)_2
• Preparation of Sr_2AlTaO_6 Insulating Films on YBa_2Cu_3O_ by Metalorganic Chemical Vapor Deposition with Purified Sr Source
• Tantalum Aluminum Alkoxide as a Double-Metal Precursor for Metalorganic Chemical Vapor Deposition of Sr_2AlTaO_6 : Surface, Interfaces, and Films
• Advances in High-T_c Single Flux Quantum Device Technologies
• Design and Operation of HTS SFQ Circuit Elements(Innovative Superconducting Devices and Their Applications)
• Development of SFQ Sampler Using High-T_c Superconductor
• Development of Thin Film Multilayer Structures with Smooth Surfaces for HTS SFQ Circuits(Digital Applications, Superconducting Electronic Devices and Their Applications)
• Fabrication of La-Doped YBCO and SrTiO_3-Buffered LSAT Thin Films for Ramp-Edge Josephson Junctions on Superconducting Ground Plane(Recent Progress in Oxide Thin Films by Sputtering)
• Development of Two-Step Deposition Process for Interface-Modified Ramp-Edge Josephson Junction with Low Sheet Inductance and Small Spread : Superconductors
• Observation of Barrier Recrystallization Process and Properties of Ramp-Edge Josephson Junctions with Interface-Modified Barrier
• Influence of Counter-Layer Deposition Condition on Critical Current Spread in Interface-Modified Ramp-Edge Junction Arrays : Superconductors
• Metal-Insulator Transition Induced by the Size Effect in Oxide S-N-S Junctions
• Electro-Luminescence from Ultra-Thin Silicon
• Variation of Radial Plasma Density Profile with the Excitation Frequency in a Magnetron-Type Plasma
• Measurements of Power Absorption in a Modified Magnetron-type Discharge
• Effect of Annealing in High-T_c Superconducting Y-Ba-Cu Oxide
• Josephson Point Contact Using High-Critical-Temperature Oxide-Superconductors
• Spectroscopic Study on Plasma-Enhanced Chemical Vapor Deposition of YBa_2Cu_3O_x Superconducting Thin Films
• Inversion Electron Mobility Affected by Phase Separation in High-Permittivity Gate Dielectrics
• Properties of Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(EtCp)_2 with Tetrahydrofuran Solvent
• Conformal Platinum Electrodes Prepared by Chemical Vapor Deposition Using a Liquid MeCpPtMe_3 Precursor in an Oxidizing Atmosphere
• Thermal Stability of a RuO_2 Electrode Prepared by DC Reactive Sputtering
• Hydrogen Reduction Properties of RuO_2 Electrodes
• X-Ray Absorption Studies of High-T_c YBa_2Cu_3O_x : Condensed Matter
• Precise EXAFS Analysis for High-T_c YBa_2Cu_3O_x : Condensed Matter
• DC-SQUID Using High-Critical-Temperature Oxide Superconductors
• Applicability of the Mean-Field Theory to the Optical Kerr Effect in the Isotropic Phase of Liquid Crystal Induced by a Continuous Wave Laser
• A 500℃ fabrication process for MIM capacitors-based on a Ta_2O_5/Nb_2O_5 bilayer with high permittivity-for DRAM and SoC applications
• Effective Electron Mobility Reduced by Remote Charge Scattering in High-K Gate Stacks : Short Note
• Effect of Heat Treatment on the Low-Temperature NQR Spectrum of ^La in Single Crystals and Polycrystals of the Antiferromagnetic La_2CuO_4
• Anomalous Temperature Dependence of ^La Nuclear Spin-Lattice Relaxation in La_2CuO_ and (La_Ca_)_2CuO_
• Effect of Residual Water on Superconductivity in (La_Sr_x)_2CuO_
• Optical Investigations of Solid-Phase Crystallization of Si_Ge_x
• Optical Investigations of Solid-Phase Crystallization (SPC) Properties of Si_Ge_X
• Atomic-Layer Doping in Si_Ge_x/Si/Si_Ge_x Heterostructures by Two-Step Solid-Phase Epitaxy
• Atomic-Layer Doping in Si_Ge_x/Si/Si_Ge_x Heterostructures by Two-Step Solid-Phase Epitaxy
• Ultrahigh Electron Mobilities in Si_Ge_x/Si/Si_Ge_x Heterostructures with Abrupt Interfaces Formed by Solid-Phase Epitaxy
• Ultrahigh Electron Mobilities in Si_Ge_x/Si/Si_Ge_x Heterostructures with Abrupt Interfaces Formed by Solid-Phase Epitaxy
• Low-Temperature Electrical Characteristics of Strained-Si-MOSFETs
• Novel SiGe-on-Insulator Virtual Substrate Fabricated by Self-Melt-Solidification
• Dependence of Transport Mean Free Path on Size of Scatterer
• Measurement of Coherent Backscattering Phenomena in Emulsion
• High-Frequency Measurement of Surface Elasticity of a Soluble Monolayer at Water Surface Using Ripplon Light Scattering Method
• Measurement of Thermal Ripplon on Liquid Surface by Light Scattering Technique : Physical Acoustics
• Dispersion of Thermal Ripplon on Free Surfaces of Pure Liquids Measured up to 6 MHz
• Effects of Post-Annealing Temperatures and Ambient Atmospheres on the Electrical Properties of Ultrathin (Ba, Sr) TiO_3 Capacitors
• Light Detection by Superconducting Weak Link Fabricated with High-Critical-Temperature Oxide-Superconductor Film
• Ultrasonic Spectroscopy in Liquids by High-Resolution Bragg Reflection Technique : Physical Acoustics I
• Ultrasonic Studies of Intermolecular Vibrational-Vibrational Energy Transfer in Liquid Mixtures
• Viscoelastic and Structural Relaxations in Liquid Cyclohexanol
• Ultrasonic and Hypersonic Measurements in Liquid Cyclohexane and Methylcyclohexane
• DC-SQUID with High-Critical-Temperature Oxide-Superconductor Film
• Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(dpm)_3 Dissolved with Tetrahydrofuran Solvent : Surfaces, Interfaoes, and Films
• The Atomistic Origin of High Dielectric Constants of Ta_2O_5 Thin Film Deposited on Ru Electrodes
• Superconducting Thin Film of (Nd, Ce)_2CuO_
• Annealing of (Nd, Ca)_2CuO_4 Compounds under High Oxygen Pressure
• Metal Schottky Source/Drain Technology for Ultrathin Silicon-on-Thin-Box Metal Oxide Semiconductor Field Effect Transistors
• Hetero-Epitaxial PbZr_Ti_O_3 Capacitors with Oxide Electrodes(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
• Oxygen Diffusion in Pt Botton Electrodes of Ferroelectric Capacitors
• Inelastic Electron Tunneling Spectroscopy of Langmuir-Blodgett Monolayers on Silicon Substrate
• Molecular Interaction between Merocyanine Dye and Several Kinds of Triphenyl Methane Derivatives in Langmuir-Blodgett Films
• Anodic Oxidation of Aluminum by Electron Tunneling through Al/Cadmium-Stearate/Al Structure
• Thermal Stability of Pt Bottom Electrodes for Ferroelectric Capacitors
• Analysis of dislocations in strained-Si/SiGe devices by EBIC technique
• Electro-Luminescence from Ultra-Thin Silicon
• Effect of Self-Induced Raman Scattering on Soliton Propagatiorn-Comparison between Raman Response Function Method and Linear-Gain Approximation
• Strain-Controlled Laterally Diffused Metal–Oxide–Semiconductor Transistor Utilizing Buried-Polysilicon Sinker as Stressor
• Evaluation of Threshold-Voltage Variation in Silicon on Thin Buried Oxide Complementary Metal–Oxide–Semiconductor and Its Impact on Decreasing Standby Leakage Current
• Wide-Range Threshold Voltage Controllable Silicon on Thin Buried Oxide Integrated with Bulk Complementary Metal Oxide Semiconductor Featuring Fully Silicided NiSi Gate Electrode
• Investigation and Integration of Polycrystalline Silicon/TiN/SiON Gate Stack in Silicon on Thin Buried Oxide Complementary Metal Oxide Semiconductor Field Effect Transistors
• Noise in Non-Linear Resistors
• Inversion Electron Mobility Affected by Phase Separation in High-Permittivity Gate Dielectrics
• Low-Temperature Electrical Characteristics of Strained-Si MOSFETs

もっと見る 閉じる

スポンサーリンク