Hetero-Epitaxial PbZr_<0.48>Ti_<0.52>O_3 Capacitors with Oxide Electrodes(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
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概要
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Two types of hetero-epitaxial PbZr_0.48Ti_0.52O_3 (PZT) capacitors were fabricated by pulsed laser deposition (PLD).One has an Au/PZT/SrRuO_3(SRO)/SrTiO_3(STO) structure with remanent polarization (Pr) of 32.1μC/cm^2.The other has an Au/PZT/La-doped STO(La:STO) structure with Pr of 9.6 to 13.5 μC/cm^2.X-ray diffraction patterns show that only the (00l) planes of the PZT and SRO are parallel to the substrate surface for the PZT/SRO/STO structure, however, a (111) plane of the PZT is observed, in addition to the (00l) planes, for the PZT/La:STO structure.High resolution-transmission electron microscope (HR-TEM) images show that the PZT/SRO interface is clean and coherent.However, spherical shape contrast with radius about 5 nm is observed at the PZT/La:STO interface.Diffusion of La and/or the contaminated surface of the La:STO substrate is thought to cause the differences in the PZT orientations and the interfaces, affecting the electrical characteristics of the capacitors.
- 社団法人電子情報通信学会の論文
- 1998-04-25
著者
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Hiratani M
Central Research Laboratory Hitachi Ltd.
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Hiratani M
Central Research Laboratory Hitachi Ltd
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Okazaki Choichiro
Central Research Laboratory Hitachi Ltd
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Okazaki Choichiro
Faculty Of Engineering Chiba University
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Okazaki Choichiro
The Authors Are With Central Research Laboratory Hitachi Ltd.
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Suga Mitsuo
The Authors Are With Central Research Laboratory Hitachi Ltd.
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HIRATANI Masahiko
The authors are with Central Research Laboratory, Hitachi Ltd.
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KOGUCHI Masanari
The authors are with Central Research Laboratory, Hitachi Ltd.
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KAKIBAYASHI Hiroshi
The authors are with Central Research Laboratory, Hitachi Ltd.
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Kakibayashi H
Hitachi Ltd. Tokyo Jpn
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Koguchi M
Hitachi Ltd Tokyo Jpn
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