Superconducting Thin Film of (Nd, Ce)_2CuO_<4-y>
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1989-06-20
著者
-
Hiratani M
Central Research Laboratory Hitachi Ltd.
-
Hiratani M
Central Research Laboratory Hitachi Ltd
-
Hiratani Masahiko
Central Research Laboratory Hitachi Ltd.
-
SAITOH Susumu
Katsuta Labs., Hitachi-Koki Ltd.
-
Saitoh S
Katsuta Lab. Hitachi-koki Ltd.
-
MIYAUCHI Katsuki
Central Research Laboratory, Hitachi, Ltd.
-
Miyauchi K
Central Research Laboratory Hitachi Ltd.
-
Miyauchi Katsuki
Central Research Laboratory Hitachi Ltd.
関連論文
- Analysis of Spot Shape Behavior on a Spot-Size Controllable Laser Diode
- Controlled Spot Size Laser Diode with Flared Stripe and Twin Stripe Modulator at Flare Base
- Tetragonal High-T_c Superconductor in the System Ba_2Y(CuGa_x)_3O_
- Low-Temperature Annealing Effect on Bi-Sr-Ca-Cu-O Thin Films Prepared by Layer-by-Layer Deposition
- Thin Film Growth of YBa_2Cu_3O_ by ECR Oxygen Plasma Assisted Reactive Evaporation
- Interfacial Reaction of SrRuO_3 Prepared Directly on TiN
- Fabrication of Pd(Zr, Ti)O_3 Microscopic Capacitors by Electron Beam Lithography
- SrRuO_3 Thin Films Grown under Reduced Oxygen Pressure
- Orientation and Crystal Structure of SrTiO_3 Thin Films Prepared by Pulsed Laser Deposition
- Electrical Characteristics of HoBa_2Cu_3O_-La_Ba_Cu_3O_-HoBa_2Cu_3O_ Junctions with Planar-Type Structures
- Preparation of YBa_2Cu_3O_ Superconducting Thin Films by RF-Magnetron Sputtering
- Metallugical Analysis of Mix-Phase Y-Ba-Cu Oxides
- Effect of Annealing in High-T_c Superconducting Y-Ba-Cu Oxide
- Inversion Electron Mobility Affected by Phase Separation in High-Permittivity Gate Dielectrics
- Properties of Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(EtCp)_2 with Tetrahydrofuran Solvent
- Conformal Platinum Electrodes Prepared by Chemical Vapor Deposition Using a Liquid MeCpPtMe_3 Precursor in an Oxidizing Atmosphere
- Thermal Stability of a RuO_2 Electrode Prepared by DC Reactive Sputtering
- Hydrogen Reduction Properties of RuO_2 Electrodes
- A 500℃ fabrication process for MIM capacitors-based on a Ta_2O_5/Nb_2O_5 bilayer with high permittivity-for DRAM and SoC applications
- Effective Electron Mobility Reduced by Remote Charge Scattering in High-K Gate Stacks : Short Note
- Effects of Post-Annealing Temperatures and Ambient Atmospheres on the Electrical Properties of Ultrathin (Ba, Sr) TiO_3 Capacitors
- Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(dpm)_3 Dissolved with Tetrahydrofuran Solvent : Surfaces, Interfaoes, and Films
- The Atomistic Origin of High Dielectric Constants of Ta_2O_5 Thin Film Deposited on Ru Electrodes
- Superconducting Thin Film of (Nd, Ce)_2CuO_
- Annealing of (Nd, Ca)_2CuO_4 Compounds under High Oxygen Pressure
- Hetero-Epitaxial PbZr_Ti_O_3 Capacitors with Oxide Electrodes(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Oxygen Diffusion in Pt Botton Electrodes of Ferroelectric Capacitors
- Pulse-Like Voltage Generation Using Polarization Reversal of Ferroelectric Ba-Substituted Pb(Zr, Ti)O_3 Ceramics
- Thermal Stability of Pt Bottom Electrodes for Ferroelectric Capacitors
- Inversion Electron Mobility Affected by Phase Separation in High-Permittivity Gate Dielectrics