Inversion Electron Mobility Affected by Phase Separation in High-Permittivity Gate Dielectrics
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概要
- 論文の詳細を見る
We have examined the effects of phase separation on the inversion electron mobility of metal-insulator-semiconductor field-effect transistors with high-permittivity (high-$\kappa$) gate dielectrics. On the basis of experimental data of hafnium silicate films, we developed a phase separation model of a high-$\kappa$ film that contains crystal grains of high permittivity in an amorphous film of low permittivity. Using this model, we calculated the electron mobility by applying a linear response theory and found that the phase separation results in a significant reduction of the electron mobility. We also discuss the differences in the calculated electron mobility between the phase-separated hafnium silicate and hafnium aluminate.
- Japan Society of Applied Physicsの論文
- 2003-12-01
著者
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Hiratani Masahiko
Central Research Laboratory Hitachi Ltd.
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SAITO Shin-ichi
Central Research Laboratory, Hitachi, Ltd.
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MATSUI Yuichi
Central Research Laboratory, Hitachi, Ltd.
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Torii Kazuyoshi
Central Research Laboratory Hitachi Lid.
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Shimamoto Yasuhiro
Central Research Laboratory Hitachi Ltd.
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Shimamoto Yasuhiro
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
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Saito Shin-ichi
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
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Hiratani Masahiko
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
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Matsui Yuichi
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
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Torii Kazuyoshi
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
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