Torii Kazuyoshi | Central Research Laboratory Hitachi Lid.

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著作論文

Strain-Imaging Observation of Pb(Zr, Ti)O_3 Thin Films
Strain Imaging of Lead-Zirconate-Titanate Thin Film by Tunneling Acoustic Microscopy
Effect of Purge Time on the Properties of HfO_2 Films Prepared by Atomic Layer Deposition(High-κ Gate Dielectrics)
Dielectric Properties of RF-Magnetron-Sputtered (Ba, Pb)(Zr, Ti)O_3 Thin Films
Single-Target Sputtering Process for Lead Zirconate Titanate Thin Films with Precise Composition Control
A High-Endurance Read/Write Scheme for Half-V_cc Plate Nonvolatile DRAMs with Ferroelectric Capacitors(Special Issue on Nonvolatile Memories)
A TiO2 Gate Insulator of a 1-nm Equivalent Oxide Thickness Deposited by Electron-Beam Evaporation
Effective Electron Mobility Reduced by Remote Charge Scattering in High-K Gate Stacks : Short Note
Highly Oxidation-Resistant TiN Barrier Layers for Ferroelectric Capacitors
Hydrogen-related Degradation and Recovery Phenomena in Pb(Zr,Ti)O_3 Capacitors with a Platinum Electrode
Highly Oxidation-Resistant TiN Barrier Layers for Ferroelectric Capacitors
A Novel Laser Annealing Process for Advanced CMOS with Suppressed Gate Depletion and Ultra-shallow Junctions
Metal Schottky Source/Drain Technology for Ultrathin Silicon-on-Thin-Box Metal Oxide Semiconductor Field Effect Transistors
Highly Accurate Composition Analysis of (Pb, Zr)TiO_3 Using a Scanning Electron Microscope/Energy Dispersive X-Ray Spectrometer
Electro-Luminescence from Ultra-Thin Silicon
Preparation of Lead Zirconate Titanate Thin Films by Reactive Evaporation ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
Effects of Thin Film Interference on Junction Activation during Sub-Millisecond Annealing
Novel Laser Annealing Process for Advanced Complementary Metal Oxide Semiconductor Devices with Suppressed Polycrystalline Silicon Gate Depletion and Ultra shallow Junctions
Electron Trap Characteristics of Silicon Rich Silicon Nitride Thin Films
Investigation of Relationship between Interface State and Random Telegraph Noise Using Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated on Si(100), (110), and (111) Substrates
Low-Shrinkage Spin-On Glass for Low Parasitic Capacitance Gap-Filling Process in Advanced Memory Devices
Self-Aligned Fabrication Process of Electrode for Organic Thin-Film Transistors on Flexible Substrate Using Photosensitive Self-Assembled Monolayers
Inversion Electron Mobility Affected by Phase Separation in High-Permittivity Gate Dielectrics
State Transition of a Defect Causing Random-Telegraph-Noise Fluctuation in Stress-Induced Leakage Current of Thin SiO
State Transition of a Defect Causing Random-Telegraph-Noise Fluctuation in Stress-Induced Leakage Current of Thin SiO₂ Films in a Metal-Oxide-Silicon Structure

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