Shima Akio | Central Research Laboratory Hitachi Ltd.
スポンサーリンク
概要
関連著者
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Shima Akio
Central Research Laboratory Hitachi Ltd.
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Torii Kazuyoshi
Central Research Laboratory Hitachi Lid.
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Mine Toshiyuki
Central Research Laboratory Hitachi Ltd
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Wang Yun
Ultratech Inc.
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MINE Toshiyuki
Central Research Laboratory, Hitachi, Ltd.
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TORII Kazuyoshi
Central Research Laboratory, Hitachi, Ltd.
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Takeda Ken-ichi
Central Research Laboratory Hitachi Ltd.
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Sugii Nobuyuki
Central Research Laboratory Hitachi Ltd.
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Mine Toshiyuki
Central Research Laboratory Hitachi Ltd.
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Hisamoto Digh
Central Research Laboratory Hitachi Ltd.
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Tsuchiya Ryuta
Central Research Laboratory Hitachi Ltd.
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SHIMA Akio
Central Research Laboratory, Hitachi, Ltd.
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FENG Lucia
Ultratech Inc.
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WANG Xiaoru
Ultratech Inc.
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Shima Akio
Central Research Laboratory, Hitachi Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan
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Tsuchiya Ryuta
Central Research Laboratory, Hitachi Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan
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Takeda Ken-ichi
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
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Mine Toshiyuki
Central Research Laboratory, Hitachi Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan
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Mise Nobuyuki
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
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Takeda Kenichi
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
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Mori Yuki
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
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Yamada Ren-ichi
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
著作論文
- A Novel Laser Annealing Process for Advanced CMOS with Suppressed Gate Depletion and Ultra-shallow Junctions
- Metal Schottky Source/Drain Technology for Ultrathin Silicon-on-Thin-Box Metal Oxide Semiconductor Field Effect Transistors
- Effects of Thin Film Interference on Junction Activation during Sub-Millisecond Annealing
- Novel Laser Annealing Process for Advanced Complementary Metal Oxide Semiconductor Devices with Suppressed Polycrystalline Silicon Gate Depletion and Ultra shallow Junctions
- Experimental Evidence for Involvement of Interface States in Random Telegraph Noise in Junction Leakage Current of MetalOxideSemiconductor Field-Effect Transistor