Experimental Evidence for Involvement of Interface States in Random Telegraph Noise in Junction Leakage Current of MetalOxideSemiconductor Field-Effect Transistor

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概要

• 論文の詳細を見る

著者

• Shima Akio

  Central Research Laboratory Hitachi Ltd.

• Takeda Kenichi

  Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan

• Mori Yuki

  Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan

• Yamada Ren-ichi

  Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan

関連論文

• A Novel Laser Annealing Process for Advanced CMOS with Suppressed Gate Depletion and Ultra-shallow Junctions
• Metal Schottky Source/Drain Technology for Ultrathin Silicon-on-Thin-Box Metal Oxide Semiconductor Field Effect Transistors
• Effects of Thin Film Interference on Junction Activation during Sub-Millisecond Annealing
• Novel Laser Annealing Process for Advanced Complementary Metal Oxide Semiconductor Devices with Suppressed Polycrystalline Silicon Gate Depletion and Ultra shallow Junctions
• Experimental Evidence for Involvement of Interface States in Random Telegraph Noise in Junction Leakage Current of MetalOxideSemiconductor Field-Effect Transistor
• State Transition of a Defect Causing Random-Telegraph-Noise Fluctuation in Stress-Induced Leakage Current of Thin SiO
• State Transition of a Defect Causing Random-Telegraph-Noise Fluctuation in Stress-Induced Leakage Current of Thin SiO₂ Films in a Metal-Oxide-Silicon Structure
• Characterization and Modeling of Voltage and Temperature Dependence of Capacitance in Al2O3-Laminated Ta2O5 Metal–Insulator–Metal Capacitor

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