Effects of Thin Film Interference on Junction Activation during Sub-Millisecond Annealing
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概要
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We investigated the effects of thin film interference during sub-millisecond annealing on junction activation and recrystallization using ultra-thin-body silicon-on-insulator (UTB-SOI) wafers. We showed that, in the wavelength range used by broadband heating sources in flash lamp annealing (FLA), thin film interference in the body Si and buried oxide layers of UTB-SOI wafers can change the light absorption. This in turn reduces the duration of the heat distribution, resulting in insufficient activation of junctions during sub-millisecond annealing. Further, we showed that laser spike annealing (LSA) can achieve full activation of junctions even in UTB-SOI wafers because using light waves in the far-infrared wavelength region can minimize thin film interference.
- 2007-05-25
著者
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Torii Kazuyoshi
Central Research Laboratory Hitachi Lid.
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Mine Toshiyuki
Central Research Laboratory Hitachi Ltd
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Tsuchiya Ryuta
Central Research Laboratory Hitachi Ltd.
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Shima Akio
Central Research Laboratory Hitachi Ltd.
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Shima Akio
Central Research Laboratory, Hitachi Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan
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Tsuchiya Ryuta
Central Research Laboratory, Hitachi Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan
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Mine Toshiyuki
Central Research Laboratory, Hitachi Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan
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