Highly Oxidation-Resistant TiN Barrier Layers for Ferroelectric Capacitors

スポンサーリンク

概要

• 論文の詳細を見る
• 1996-08-26

著者

• FUJISAKI Yoshihisa

  Central Research Laboratory, Hitachi Ltd.

• MIKI Hiroshi

  Department of Pathology, Kagawa Medical University

• Matsui Yasushi

  Electronics Research Laboratory Corporate Research & Development Matsushita Electronics Corporat

• MATSUI Yuichi

  Central Research Laboratory, Hitachi, Ltd.

• TORII Kazuyoshi

  Central Research Laboratory, Hitachi, Ltd.

• Torii K

  Central Research Laboratory Hitachi Ltd.

• Torii Kazuyoshi

  Central Research Laboratory Hitachi Lid.

• Torii K

  Semiconductor Leading Edge Technol. Inc. Tsukuba-shi Jpn

• Muto Y

  The Institute For Materials Research Tohoku University

• Miura H

  Hitachi Ltd. Tsuchiura‐shi Jpn

• Miki Hiroshi

  Central Research Laboratory Hitachi Ltd.

• KUSHIDA Keiko

  Central Research Lab., Hitachi, Lid.

• Kushida‐abdelghafar K

  The Authors Are With Central Research Laboratory Hitachi Ltd.

• Kushida K

  Hitachi Ltd. Tokyo Jpn

• Fujisaki Y

  R&d Association For Future Electron Devices

• Fujisaki Yoshihisa

  Central Research Laboratory Hitachi Limited

• Miki Hiroshi

  Central Research Laboratory Hitachi Limited

• Fujisaki Yoshihisa

  R&D Association for Future Electron Devices

関連論文

• Low-Temperature Growth of SiO_2 Thin Film by Photo-Induced Chemical Vapor Deposition Using Synchrotron Radiation
• Critical-Dimension Controllability of Chemically Amplified Resists for X-Ray Membrane Mask Fabrication
• Strain-Imaging Observation of Pb(Zr, Ti)O_3 Thin Films
• Strain Imaging of Lead-Zirconate-Titanate Thin Film by Tunneling Acoustic Microscopy
• Nondestruetive Characterization of Deep Levels in Semi-Insulating GaAs Wafers Using Microwave Impedance Measurement
• Dependence of Deep Level Concentration on Nonstoiehiometry in MOCVD GaAs
• Early stage gastric MALT lymphoma with high-grade component cured by Helicobacter pylori eradication
• Does Recurrent Acute Pancreatitis Lead to Chronic Pancreatitis? Sequential Morphological and Biochemical Studies
• Observation of the interaction of vortices with dislocations in a Nb superconductor by a cryo-Lorentz EM
• High-Resolution Transmission Electron Microscopy of Long-Period Structures of Various Phases in a Bi-Sr-Cu-O System
• Identification of the Superconducting Phase in the Nd-Ce-Sr-Cu-O System : Electrical Properties of Condensed Matter
• High-Resolution Electron Microscopy of Modulated Structure in 20 K Superconducting Oxide Bi_2Sr_2CuO_y : Electrical Properties of Condensed Matter
• High Resolution Electron Microscopy of Intergrowth and Modulated Structure in 100 K High-T_c Superconductor Bi_2 (Sr,Ca) _4Cu_3O_y : Electrical Properties of Condensed Matter
• Structure Analysis of the Bi_2(Sr,Ca)_3Cu_2O_ Superconducting Crystal Based on the Computer Simulation of HRTEM Images : Condensed Matter
• Twins and Intergrowth Defects in High-T_c Bi-Sr-Ca-Cu-O Superconductor Examined by High-Resolution Electron Microscopy : Electrical Properties of Condensed Matter
• On the 110 K Superconductor in the Bi-Ca-Sr-Cu-O System : Electrical Properties of Condensed Matter
• Possible Model of the Modulated Structure in High-T_c Superconductor in a Bi-Sr-Ca-Cu-O System Revealed by High-Resolution Electron Microscopy : Electrical Properties of Condensed Matter
• Identification of the Superconducting Phase in the Bi-Ca-Sr-Cu-O System : Electrical Properties of Condensed Matter
• High-Resolution Electron Microscopy of Modulated Structure in the New High-T_c superconductors of the Bi-Sr-Ca-Cu-O System : Electrical Properties of Condensed Matter
• High-Resolution Electron Microscopy of Planer Defects and Dislocation in Ba_2YCu_3O_y
• Electron Diffraction and Microscope Study of Ba-Nd-Cu-O Superconducting Oxides and Related Compounds
• Crystal Structure of the Superconductor Ba_Nd_Cu_3O_
• Electron Diffraction and Microscope Study of Radiation Damage in Ba_2YCu_3O_y
• Preparation of (Ba, Sr)TiO_3 Thin Films by Chemical Vapor Deposition Using Liquid Sources
• Dissociative Excitation Reaction of CH_3CN with the Discharge Flow of Ar : Prediction of the [N]/([N]+[C]) Ratio of Hydrogenated Amorphous Carbon Nitride Films in the Desiccated System
• Sub-100-nm Device Fabrication using Proximity X-Ray Lithography at Five Levels
• Sarcomatoid hepatocellular carcinoma with chondroid variant: Case report with immunohistochemical findings
• Intrathyroidal branchial cleft-like cyst in chronic thyroiditis
• Electro-Luminescence from Ultra-Thin Silicon
• Malignant fibrous histiocytoma of the pancreas
• Mask Error Factor in Proximity X-Ray Lithography
• Optimum Phase Condition for Low-Contrast X-Ray Masks
• Measurement and Calculation of SiH_2 Radical Density in SiH_4 and Si_2H_6 Plasma for the Deposition of Hydrogenated Amorphous Silicon Thin Films
• Measurement of SiH_2 Densities in an RF-Discharge Silane Plasma Used in the Chemical Vapor Deporsition of Hydrogenated Amorphous Silicon Film
• Spectroscopic Measurements of the Production and the Transport of CH Radicals in a Methane Plasma Used for the CVD of a-C:H
• On the Reaction Kinetics in a Mercury Photosensitized CVD of a-Si:H Films
• Development of methanol sensor using a shear horizontal surface acoustic wave device for a direct methanol fuel cell
• High-Quality CVD/Thermal Stacked Gate Oxide Films with Hydrogen-Free CVD SiO_2 Formed in a SiCl_4-N_2O System
• Kinetic Study of Silicon Nitride Growth from Dichlorosilane and Ammonia
• Evaluation of Acid Diffusibility in a Chemical Amplification Resist Using Acidic Water-Soluble Film
• Development of temperature-control system for liquid droplet using surface Acoustic wave devices
• Use of a low refractive index prism in surface plasmon resonance biosensing
• Dependence of SPR sensor performance on prism material and its importance in biosensor
• I-3 Deposition of thin film based on SAW streaming(Device application (English session))
• P1-27 A study on SAW streaming phenomenon based on temperature measurement and observation of streaming in liquids(Poster session 1)
• Inversion Electron Mobility Affected by Phase Separation in High-Permittivity Gate Dielectrics
• High-Performance X-Ray Mask Fabrication Using TaGeN Absorber and Dummy Pattern Method for Sub-100nm Proximity X-Ray Lithography : Instrumentation, Measurement, and Fabrication Technology
• Suppression of Pattern Edge Roughness by Low Ion Strength Developer
• Properties of Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(EtCp)_2 with Tetrahydrofuran Solvent
• Evaluation of Overlay Accuracy for 100-nm Ground Rule in Proximity X-Ray Lithography
• Conformal Platinum Electrodes Prepared by Chemical Vapor Deposition Using a Liquid MeCpPtMe_3 Precursor in an Oxidizing Atmosphere
• Thermal Stability of a RuO_2 Electrode Prepared by DC Reactive Sputtering
• Hydrogen Reduction Properties of RuO_2 Electrodes
• Performance of X-Ray Stepper for Next-Generation Lithography
• In-Situ Characterization of Si Surface Oxidation by High-Sensitivity Infrared Reflection Spectroscopic Method
• High-Sensitivity Infrared Characterization of Ultrathin SiO_2 Film by Grazing Internal Reflection Method
• Dielectric Properties of RF-Magnetron-Sputtered (Ba, Pb)(Zr, Ti)O_3 Thin Films
• Single-Target Sputtering Process for Lead Zirconate Titanate Thin Films with Precise Composition Control
• A 500℃ fabrication process for MIM capacitors-based on a Ta_2O_5/Nb_2O_5 bilayer with high permittivity-for DRAM and SoC applications
• A High-Endurance Read/Write Scheme for Half-V_cc Plate Nonvolatile DRAMs with Ferroelectric Capacitors(Special Issue on Nonvolatile Memories)
• A TiO2 Gate Insulator of a 1-nm Equivalent Oxide Thickness Deposited by Electron-Beam Evaporation
• Effective Electron Mobility Reduced by Remote Charge Scattering in High-K Gate Stacks : Short Note
• Highly Oxidation-Resistant TiN Barrier Layers for Ferroelectric Capacitors
• Hydrogen-related Degradation and Recovery Phenomena in Pb(Zr,Ti)O_3 Capacitors with a Platinum Electrode
• Highly Oxidation-Resistant TiN Barrier Layers for Ferroelectric Capacitors
• Reaction Mechanism of Chemical Vapor Deposition Using Tetraethylorthosilicate and Ozone at Atmospheric Pressure
• High Output Power Operation of a 1.3 μm Gain-Coupled Distributed Feedback Laser with Narrow Spectral Linewidth
• New Structure of 1.3 μm Strained-Layer Multi-Quantum Well Complex-Coupled Distributed Feedback Lasers
• Novel Structure of 1.3μm Strained-Layer MQW Complex-Coupled DFB Lasers
• Analysis of Decomposed Layer Appearing on the Surface of Barium Strontium Titanate
• Effects of Post-Annealing Temperatures and Ambient Atmospheres on the Electrical Properties of Ultrathin (Ba, Sr) TiO_3 Capacitors
• Improved Resistance Against the Reductive Ambient Annealing of Ferroelectric Pb(Zr, Ti)O_3 Thin Film Capacitors with IrO_2 Top Electrode(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
• Profile-Imaging of Wavy Cleavage Surface of Bi_2Sr_2CaCu_2O_y by High-Resolution Transmission Electron Microscopy
• A Novel Laser Annealing Process for Advanced CMOS with Suppressed Gate Depletion and Ultra-shallow Junctions
• Fabrication of Diamond Membranes for X-Ray Masks by Hot-Filament Method
• Preparation and Crystal Structures of Bi-Based Layered Oxides Including Fe
• T_c = 113 K Bi-Based Superconductor Prepared by Doping Fluorine
• Low-Temperature Electron Microscopy of a Bi_2(Sr, Ca)_3Cu_2O_x Superconductor
• Fatigueless Ferroelectric Capacitors with Ruthenium Bottom and Top Electrodes Formed by Metalorganic Chemical Vapor Deposition
• Collision Tumor of Cutaneous Malignant Melanoma and Basal Cell Carcinoma
• IrO_2/Pb(Zr_xTi_)O_3(PZT)/Pt Ferroelectric Thin-Film Capacitors Resistant to Hydrogen-Annealing Damage
• IrO_2/Pb (Zr_xTi_)O_3(PZT)/Pt Ferroelectric Thin-Film Capacitors Resistant to an Interlayer-Dielectric-Deposition Process
• Stress Analysis of Transistor Structures Considering the Internal Stress of Thin Films
• Oxygen Diffusion in Pt Botton Electrodes of Ferroelectric Capacitors
• Study of Surface Reaction Probability of CF_x Radicals by Trench Deposition Method
• Preparation of PbZrO_3 -PbTiO_3 -Pb(Mg_Nb_)O_3 Thick Films by Screen Printing
• Organic Ferroelectric Diodes with Long Retention Characteristics Suitable for Non-Volatile Memory Applications
• Stress Analysis in Silicon Substrates during Thermal Oxidation
• Residual Stress in Silicon Substrate with Shallow Trenches on Surface after Local Thermal Oxidation
• Residual Stress Measurement in Silicon Substrates after Thermal Oxidation
• Waveguide-Type Multifrequency Acoustooptic Modulators
• Preparation of 0.92PbZrO_3-0.03PbTiO_3-0.05Pb(Zn_Nb_)O_3 Pyroelectric Thick Films by Screen Printing
• Gouty flexor tenosynovitis of the hand mimicking atypical mycobacterial infection
• Thermal Stability of Pt Bottom Electrodes for Ferroelectric Capacitors
• New Biosensor Using Shear Horizontal Surface Acoustic Wave Device
• Focal nodular hyperplasia coexistent with hemangioma and multiple cysts of the liver
• Changes in the Microhemodynamics of Nerve Root Retraction in Patients With Lumbar Spinal Canal Stenosis
• Electro-Luminescence from Ultra-Thin Silicon
• Characterization of In20Ge15Sb10Te55 Phase Change Material for Phase Change Memory with Low Power Operation and Good Data Retention
• Inversion Electron Mobility Affected by Phase Separation in High-Permittivity Gate Dielectrics

もっと見る 閉じる

スポンサーリンク