Fatigueless Ferroelectric Capacitors with Ruthenium Bottom and Top Electrodes Formed by Metalorganic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2005-04-10
著者
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KUROIWA Takeharu
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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FUJISAKI Yoshihisa
Central Research Laboratory, Hitachi Ltd.
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FURUKAWA Taisuke
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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ISHIWARA Hiroshi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Ishiwara H
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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SATO Takehiko
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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- Dependence of Ferroelectric Properties on Thickness of BiFeO_3 Thin Films Fabricated by Chemical Solution Deposition
- Electron-Beam Exposure(EBE) and Epitaxy of GaAs Films on CaF_2/Si Structures : Surfaces, Interfaces and Films
- Flattening the Surface of CaF_2/Si(100) Structures by Post-Growth Annealing : Surfaces, Interfaces and Films
- Characterization of Ultrathin CaF_2 Films Heteroepitaxially Grown on Si(111) Surfaces : Surfaces, Interfaces and Films
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- Optimization of the Growth Conditions of Heteroepitaxial GaAs Films on CaF_2/Si Structures
- Formation of GaAs-on-Insulator Structures on Si Substrates by Heteroepitaxial Growth of CaF_2 and GaAs
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- Epitaxial Relations in Lattice-Matched (Ca, Sr)F_2 Films Grown on GaAs{111} and Ge(111) Substrates
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