Radiation Damage in Epitaxial CaF_2 Films on Si Substrates by Ar^+ Ion Implantation
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概要
- 論文の詳細を見る
Radiation damage in epitaxial CaF_2 films on Si substrates produced by 150 keV Ar^+ ion implantation has been investigated using Rutherford backscattering and channeling techniques. It has been found that CaF_2 films are more stable than Si crystals for ion bombardment and are not amorphized at such a high dose as 6 × 10^<16> cm^<-2>. Recovery of the damage by subsequent thermal annealing has also been investigated.
- 社団法人応用物理学会の論文
- 1983-07-20
著者
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ISHIWARA Hiroshi
Graduate School of Science
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ORIHARA Kouzo
Graduate School of Science and Engineering, Tokyo Institute of Technology
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Orihara Kouzo
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Ishiwara Hiroshi
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Asano Tanemasa
Graduate School Of Information Science And Electrical Engineering Kyushu University
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Ishiwara H
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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