Preparation of PbTiO_3 Films Utilizing Self-Control Mechanism of Stoichiometric Composition in Dual-Beam Vacuum Evaporation Method
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概要
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Optimum conditions for preparing PbTiO_3 films on Si and SrTiO_3 substrates are investigated in the dual-beam vacuum evaporation method using PbO and TiO_2. It has been found that tetragonal PbTiO_3 films are formed on Si substrates at temperatures ranging from 550℃ to 60O℃, and that the stoichiometric composition of the films is easily obtained at 600℃ by supplying excess PbO molecules to the substrate. It has also been found that PbTiO_3 films grow epitaxially on SrTiO_3 substrates at temperatures around 550℃.
- 社団法人応用物理学会の論文
- 1992-09-30
著者
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Ueno Satoshi
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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