Film Quality Dependence of Adaptive-Learning Processes in Neurodevices Using Ferroelectric PbZr_xTi_<1-x>O_3 (PZT) Films

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概要

• 論文の詳細を見る

• Partial switching in ferroelectric PbZr_xTi_<1-x>O_3 (PZT) thin films has been studied for adaptive-learning metal-ferroelectric-semiconductor field-effect transistor (MFSFET) applications. In particular, the effects of film quality on adaptive-learning processes in ferroelectric PZT thin films are discussed. Dimensionality factor n of the ferroelectric domain growth is estimated to be 1.3-1.4 for sol-get grown PZT films and 2.0-2.1 for vacuume-vaporated materials. It is shown that this discrepancy results in the difference of the adaptive-learning processes. It is also demonstrated that the learning process in PZT films can gradually proceed by applying the short input pulses.

• 社団法人応用物理学会の論文
• 1995-02-28

著者

• Ishiwara Hiroshi

  Graduate School Of Science And Engineering Tokyo Institute Of Technology

• Ishiwara Hiroshi

  Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering

• Ishiwara Hiroshi

  Precision & Intelligence Laboratory Tokyo Institute Of Technology

• Ishiwara H

  Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering

• Nakamura Ryohei

  Hitachi Metals Ltd.

• Tokumitsu E

  Tokyo Inst. Technol. Yokohama Jpn

• Tokumitsu E

  Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology

• Tokumitsu Eisuke

  Precision And Intelligence Laboratory Tokyo Institute Of Technology

• ITANI Kensuke

  Precision & Intelligence Laboratory, Tokyo Institute of Technology

• NAKAMURA Ryo-ichi

  Precision & Intelligence Lab. Tokyo Institute of Technology

• Itani Kensuke

  Precision And Intelligence Laboratory Tokyo Institute Of Technology

• Tokumitsu Eisuke

  Precision & Intelligence Laboratory, Tokyo Institute of Technology,

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