Properties of Ferroelectric BaMgF_4 on Si(100), (110) and (111) Substrates Obtained by Post-Deposition Rapid Thermal Annealing
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概要
- 論文の詳細を見る
- 1996-02-01
著者
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ISHIWARA Hiroshi
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Kim Kwang-ho
Department Of Semiconductor Engineering Cheongju University
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Kim J‐d
Department Of Electrical And Computer Engineering Kanazawa University
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Kim Je-deok
Department Of Semiconductor Engineering Cheong-ju University
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Ishiwara Hiroshi
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Ishiwara Hiroshi
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Kim Kwang-ho
Department Of Semiconductor Engineering Cheong-ju University
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Kim Kwang-ho
Department Of Architecture Inha University
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Ishiwara H
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Kim Je-deok
Department Of Electrical And Computer Engineering Kanazawa University
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