ED2000-68 / SDM2000-68 Calculation of polarization and mobile charge density in ferroelectric films on Si using TVS (Triangular Voltage Sweep) method

スポンサーリンク

概要

• 論文の詳細を見る

• The detection technique both the polarization and the mobile charge density at the same time in ferroelectric films on Si using TVS method have been proposed. This TVS method yield a polarizable and an ionic displacement current peaks whose areas are proportional to the total polaization reversal charge and the total mobile ionic space charge, respectively. The calculated polarization and the mobile charge density TVS measured at 250℃ were 0.42μC / cm^2 and 5.5 × 10^<11> mobile ions / cm^2 in the SBT film of MFIS structure, and 1.4μC / cm^2 in the LiNbO_3 films of MFS structure, respectively.

• 社団法人電子情報通信学会の論文
• 2000-06-22

著者

• Lee Won-jae

  Electronics And Telecommunications Research Institute

• Lee Won-jae

  Research Center For Electronic Ceramics (rcec) Department Of Advanced Materials Engineering Dong-eui

• Kim Kwang-ho

  Department Of Semiconductor Engineering Cheongju University

• JEONG Sang

  Department of Physiology, College of Veterinary Medicine, Konkuk University

• Yu B‐g

  It Convergence And Component Laboratory Electronics And Telecommunications Research Institute

• Yu Byoung-gon

  Electronics And Telecommunications Research Institute

• Yu Byoung-gon

  Micro-electronics Laboratory Electronics And Telecommunications Research Institute

• Lee Nam-yeal

  Department Of Semiconductor Engineering Cheongju University

• Jeong Sang-hyun

  Department Of Semiconductor Engineering Cheongju University

• You In

  Electronics And Telecommunications Research Institute

• Lee Won-jae

  Electronic Ceramic Materials Research Center Korea Advanced Institute Of Science And Technology

• Lee Won-jae

  Micro-electronics Laboratory Electronics And Telecommunications Research Institute

• Kim Jin-kyu

  Department Of Semiconductor Engineering Cheongju University

• Kim Y‐s

  Department Of Semiconductor Engineering Cheongju University

• Kim Yong-Seong

  Department of Semiconductor Engineering, Cheongju University

• Jung Soon-Won

  Department of Semiconductor Engineering, Cheongju University

• Yu Byung-Gon

  Electronics and Telecommunications Research Institute

• Yang Yil-Suk

  Electronics and Telecommunications Research Institute

• Kim Yong-seong

  Department Of Semiconductor Engineering Cheongju University

• Kim Kwang-ho

  Department Of Architecture Inha University

• Jung Soon-won

  It Convergence & Components Laboratory Electronics And Telecommunications Research Institute

• Jung Soon-won

  Department Of Semiconductor Engineering Cheongju University

• Jeong Sang

  Department Of Dermatology And Division Of Brain Korea 21 Project For Biomedical Science Korea Univer

• Kim Yong-seong

  Department Of Physical Therapy Nambu University

• Jeong Sang

  Department of Chemical Engineering, Chungbuk National University

関連論文

• Etching Behavior and Damage Recovery of SrBi_2Ta_2O_9 Thin Films
• The Etching Behaviors of Pt/SrBi_2Ta_2O_9/NO/Si Structure for MFIS in NDRO-Type FRAM
• The Etching Behaviors of Pt/SrBi_2Ta_2O_9/NO/Si Structure for MFIS in NDRO-Type FRAM
• The Etching Behaviors of Pt/SrBi_2Ta_2O_9/NO/Si Structure for MFIS in NDRO-Type FRAM
• Electrical Properties of SrBi_2Ta_2O_9/Insulator/Si Structures with Various Insulators
• Formation of Ferroelectric Thin Films for MFIS or MFMIS Structure
• Formation of Ferroelectric Thin Films for MFIS or MFMIS Structure
• Cloning and Heterologous Expression of a Ca^-Activated Chloride Channel Isoform from Rat Brain(Molecular and Cell Biology)
• Nanoscale Observations on the Degradation Phenomena of Phase-Change Nonvolatile Memory Devices Using Ge_2Sb_2Te_5
• Dry Etching of Ge_2Sb_2Te_5 Thin Films into Nanosized Patterns Using TiN Hard Mask
• Lower Power and Higher Speed Operations of Phase-Change Memory Device Using Antimony Selenide (Sb_xSe_)
• Etching Characteristics of Ge_2Sb_2Te_5 Using High-Density Helicon Plasma for the Nonvolatile Phase-Change Memory Applications
• ED2000-68 / SDM2000-68 Calculation of polarization and mobile charge density in ferroelectric films on Si using TVS (Triangular Voltage Sweep) method
• ED2000-68 / SDM2000-68 Calculation of polarization and mobile charge density in ferroelectric films on Si using TVS (Triangular Voltage Sweep) method
• Characterizations of Ferroelectric Transistors with BaMgF_4 Dielectric
• Characterizations of Ferroelectric Transistors with BaMgF_4 Dielectric
• A Low Operating Voltage(3V) Metal-Ferroelectric-Semiconductor(MFS)FET's Using LiNbO_3/Si(100)Structures For Nonvolatile Memory Application
• A Low Operating Voltage(3V)Metal-Ferroelectric-Semiconductor(MFS)FET's Using LiNbO_3/Si(100)Structures For Nonvolatile Memory Application
• Abnormal Grain Growth of Ni_3Sn_4 at Sn-3.5Ag/Ni Interface
• Effect of Under Bump Metallurgy and Reflows on Shear Strength and Microstructure of Joint between Cu Substrate and Sn-36Pb-2Ag Solder Alloy
• Thermodynamics-Aided Alloy Design and Evaluation of Pb-free Solders for High-Temperature Applications
• Fabrication and properties of metal-ferroelectric-semiconductor devices using ferroelecttic VF2-TrFE copolymer films (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Fabrication and properties of metal-ferroelectric-semiconductor devices using ferroelecttic VF2-TrFE copolymer films (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Annealing of RuO_2 and Ru Bottom Electrodes and Its Effects on the Electrical Properties of (Ba,Sr)TiO_3 Thin Films
• Properties of GaN MIS capacitors using Al_2O_3 as gate dielectric deposited by Remote Plasma Atomic Layer Deposition(Session1: Compound Semiconductor Devices)
• Properties of GaN MIS capacitors using Al_2O_3 as gate dielectric deposited by Remote Plasma Atomic Layer Deposition(Session1: Compound Semiconductor Devices)
• A study on the Concept of Prospect in Frank Lloyd Wright's Works
• Structural and Ferroelectric Properties of Sol-Get Deposited Nb-doped Pb[(Sc_Nb_)_Ti_]O_3 Thin Films
• Properties of MFSFET's with Various Gate Electrodes Using LiNbO_3/Si (100) Structures
• Properties of MFSFET's with Various Gate Electrodes Using LiNbO_3/Si (100) Structures
• Properties of MFSFET's with Various Gate Electrodes Using LiNbO_3/Si (100) Structures
• Phase Formations and Electrical Properties of Bi_La_Ti_3O_ and Sm-Doped Bi_La_Sm_Ti_3O_ Thin Films with Annealing Temperature
• Material Design Schemes for Single-Transistor-Type Ferroelectric Memory Cells Using Pt/(Bi, La)_4Ti_3O_12/ONO/Si Structures
• Fabrication and Characterization of Ferroelectric-Gate Memory Devices Using (Bi, La)4Ti3O12/HfO2 Structure (先端デバイスの基礎と応用に関するアジアワークショップ)
• Fabrication and Characterization of Ferroelectric-Gate Memory Devices Using (Bi, La)_4 Ti_3O_/HfO_2 Structure (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
• New High-k SrTa_2O_6 Gate Dielectrics Prepared by Plasma-Enhanced Atomic Layer Chemical Vapor Deposition : Surface, interface, and Films
• SrTa_2O_6 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition : Surfaces, Interfaces, and Films
• Phase Formations and Electrical Properties of(Sr_xBa_)Bi_2Ta_2O_9 Thin Films
• A Non-destructive Readout Single Transistor FRAM with Floating Well structures
• A Non-destructive Readout Single Transistor FRAM with Floating Well structures
• A Non-destructive Readout Single Transistor FRAM with Floating Well structures
• Growth and Characterization of (Ba_Sr_)TiO_3 Films Epitaxially Grown on (002) GaN/(0006) Al_2O_3 Electrode
• Ferromagnetism of Heteroepitaxial Zn_Cu_xO Films Grown on n-GaN Substrates
• Properties of LiNbO_3 thin films fabricated by CSD (Chemical Solution Decomposition) method(AWAD2003 : Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices)
• Properties of LiNbO_3 thin films fabricated by CSD (Chemical Solution Decomposition) method (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
• Fabrications and Properties of Pt/LiNbO_3/AlN/Si(100)Structures for Nonvolatile Memory Application
• Fabrications and Properties of Pt/LiNbO_3/AIN/Si (100) Structures for Nonvolatile Memory Application
• Characteristics of SiOF Films Formed by Remote Plasma Enhanced Chemical Vapor Deposition with SF_6 Gas
• Effects of the Interfacial Layers on the Time-Dependent Leakage Current Characteristics of (Ba,Sr)TiO_3 Thin Films
• Pt/RuO_2 Hybrid Bottom Electrodes and Their Effects on the Electrical Properties of (Ba, Sr)TiO_3 Thin Films
• Fluoridation of GaAs Surface in a Remote SF_6 Plasma
• Assessment of the skin irritation potential of quantum dot nanoparticles using a human skin equivalent model
• A Case of Congenital Soft Tissue Chondroma
• Properties of Ferroelectric BaMgF_4 on Si(100), (110) and (111) Substrates Obtained by Post-Deposition Rapid Thermal Annealing
• Substrate Orientation Dependence of the Properties of Metal-Ferroelectric BaMgF_4-Silicon Capacitors by Post-Deposition Annealing
• A Comparative Study on the Concept of Space in Gana Art Center and Whanki Museum : Focused on Prospect and Continuity
• A study on the Correlation between Aldo Rossi's Drawing and De Chirico's Painting on the Basis of Metaphysics
• Change in Ankle Dorsiflexion Range of Motion and Ultrasonographic Images of the Tibialis Anterior with Age
• P-100 Estimation of Pollutants from Ship Sources in the Coastal Area(Poster session)
• Growth and Characterization of (Ba0.5Sr0.5)TiO3 Films Epitaxially Grown on (002) GaN/(0006) Al2O3 Electrode
• Ferromagnetism of Heteroepitaxial Zn1-xCuxO Films Grown on n-GaN Substrates
• Phase Formations and Electrical Properties of Bi3.15La0.85Ti3O12 and Sm-Doped Bi3.073La0.85Sm0.077Ti3O12 Thin Films with Annealing Temperature
• Annealing of RuO 2 and Ru Bottom Electrodes and Its Effects on the Electrical Properties of (Ba,Sr)TiO 3 Thin Films
• Electro-Deoxidation Behavior of Graphite Oxide in Aqueous Solution
• Electro-Deoxidation Behavior of Graphite Oxide in Aqueous Solution

もっと見る 閉じる

スポンサーリンク