Growth and Characterization of (Ba0.5Sr0.5)TiO3 Films Epitaxially Grown on (002) GaN/(0006) Al2O3 Electrode

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概要

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• Epitaxial (Ba0.5Sr0.5)TiO3 (BST) films have been grown on an n-GaN/(0006) Al2O3 by pulsed-laser deposition. X-ray $\theta$-2$\theta$, $\omega$-rocking curves, and $\phi$-scans reveal the epitaxial growth of (111) BST/(002) GaN bilayers. The full-width at half-maximum (FWHM) of (111) BST deposited on GaN was 0.95°. The depth profile of the film was recorded by Auger electron spectroscopy (AES). The dielectric constant of the BST film was about 510 with a dielectric loss of 0.05 at 1 kHz. The memory window of the epitaxial BST film was about 2 V for an applied voltage range of $-8$ V to 3 V.

• 2004-11-01

著者

• Kim Jong-pil

  Nano-surface Analysis Team Korea Basic Science Institute

• Hwang Jae-yeol

  Nano-surface Analysis Team Korea Basic Science Institute

• Lee Won-jae

  Electronic Ceramic Materials Research Center Korea Advanced Institute Of Science And Technology

• Jeong Se-young

  School Of Nano-science And Technology Pusan National University

• CHO Chae-Ryong

  Nano-Surface Analysis Team, Korea Basic Science Institute

• Yoon Soon-gil

  Department Of Materials And Engineering Chungnam Notional University

• Kim Jong-Pil

  Nano-Surface Analysis Team, Korea Basic Science Institute, Busan 609-735, Korea

• Jeong Se-Young

  School of Nano-Science and Technology, Pusan National University, Busan 609-735, Korea

• Cho Chae-Ryong

  Nano-Surface Analysis Team, Korea Basic Science Institute, Busan 609-735, Korea

• Lee Won-Jae

  Electronic Ceramics Center (ECC), Department of Information Materials Engineering, Dong-Eui University, Busan 614-714, Korea

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