Properties of MFSFET's with Various Gate Electrodes Using LiNbO_3/Si (100) Structures

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概要

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• MFSFET's with various gate electrodes, that are aluminum, platinum and poly-Si, using LiNbO_3/Si (100) structures were fabricated and the properties of the FET's have been discussed. The gate leakage current density of the MFS device using a Pt electrode showed the least value of low 10^<-8> A/cm^2 orders at the field of 500 kV/ cm. The drain current as a function of retention time of the FET using Pt electrode remained almost the same value of its initial value over 2 days at room temperature.

• 社団法人電子情報通信学会の論文
• 1999-07-23

著者

• Lee Won-jae

  Electronics And Telecommunications Research Institute

• Lee Won-jae

  Research Center For Electronic Ceramics (rcec) Department Of Advanced Materials Engineering Dong-eui

• Kim Kwang-ho

  Department Of Semiconductor Engineering Cheongju University

• Yu B‐g

  It Convergence And Component Laboratory Electronics And Telecommunications Research Institute

• Yu Byoung-gon

  Electronics And Telecommunications Research Institute

• Yu Byoung-gon

  Micro-electronics Laboratory Electronics And Telecommunications Research Institute

• Kim K‐h

  Department Of Semiconductor Engineering Cheongju University

• Lee Won-jae

  Electronic Ceramic Materials Research Center Korea Advanced Institute Of Science And Technology

• Lee Won-jae

  Micro-electronics Laboratory Electronics And Telecommunications Research Institute

• Jung Soon-Won

  Department of Semiconductor Engineering, Cheongju University

• Kim Chae-Gyu

  Department of Semiconductor Engineering, Cheongju University,

• Kim Chae-gyu

  Department Of Semiconductor Engineering Cheongju University

• Kim Kwang-ho

  Department Of Semiconductor Engineering Chong-ju University

• Kim Kwang-ho

  Division Of Materials Science And Engineering Seoul National Uriversity

• Kim Kwang-ho

  Department Of Architecture Inha University

• Jung Soon-won

  It Convergence & Components Laboratory Electronics And Telecommunications Research Institute

• Jung Soon-won

  Department Of Semiconductor Engineering Cheongju University

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