Yu B‐g | It Convergence And Component Laboratory Electronics And Telecommunications Research Institute

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著作論文

Etching Behavior and Damage Recovery of SrBi_2Ta_2O_9 Thin Films
The Etching Behaviors of Pt/SrBi_2Ta_2O_9/NO/Si Structure for MFIS in NDRO-Type FRAM
The Etching Behaviors of Pt/SrBi_2Ta_2O_9/NO/Si Structure for MFIS in NDRO-Type FRAM
The Etching Behaviors of Pt/SrBi_2Ta_2O_9/NO/Si Structure for MFIS in NDRO-Type FRAM
Electrical Properties of SrBi_2Ta_2O_9/Insulator/Si Structures with Various Insulators
Formation of Ferroelectric Thin Films for MFIS or MFMIS Structure
Nanoscale Observations on the Degradation Phenomena of Phase-Change Nonvolatile Memory Devices Using Ge_2Sb_2Te_5
Dry Etching of Ge_2Sb_2Te_5 Thin Films into Nanosized Patterns Using TiN Hard Mask
Lower Power and Higher Speed Operations of Phase-Change Memory Device Using Antimony Selenide (Sb_xSe_)
Etching Characteristics of Ge_2Sb_2Te_5 Using High-Density Helicon Plasma for the Nonvolatile Phase-Change Memory Applications
ED2000-68 / SDM2000-68 Calculation of polarization and mobile charge density in ferroelectric films on Si using TVS (Triangular Voltage Sweep) method
ED2000-68 / SDM2000-68 Calculation of polarization and mobile charge density in ferroelectric films on Si using TVS (Triangular Voltage Sweep) method
A Low Operating Voltage(3V) Metal-Ferroelectric-Semiconductor(MFS)FET's Using LiNbO_3/Si(100)Structures For Nonvolatile Memory Application
A Low Operating Voltage(3V)Metal-Ferroelectric-Semiconductor(MFS)FET's Using LiNbO_3/Si(100)Structures For Nonvolatile Memory Application
Structural and Ferroelectric Properties of Sol-Get Deposited Nb-doped Pb[(Sc_Nb_)_Ti_]O_3 Thin Films
Properties of MFSFET's with Various Gate Electrodes Using LiNbO_3/Si (100) Structures
Properties of MFSFET's with Various Gate Electrodes Using LiNbO_3/Si (100) Structures
Properties of MFSFET's with Various Gate Electrodes Using LiNbO_3/Si (100) Structures
Material Design Schemes for Single-Transistor-Type Ferroelectric Memory Cells Using Pt/(Bi, La)_4Ti_3O_12/ONO/Si Structures
Fabrication and Characterization of Ferroelectric-Gate Memory Devices Using (Bi, La)4Ti3O12/HfO2 Structure (先端デバイスの基礎と応用に関するアジアワークショップ)
Fabrication and Characterization of Ferroelectric-Gate Memory Devices Using (Bi, La)_4 Ti_3O_/HfO_2 Structure (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
New High-k SrTa_2O_6 Gate Dielectrics Prepared by Plasma-Enhanced Atomic Layer Chemical Vapor Deposition : Surface, interface, and Films
SrTa_2O_6 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition : Surfaces, Interfaces, and Films
Phase Formations and Electrical Properties of(Sr_xBa_)Bi_2Ta_2O_9 Thin Films

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