Ryu S‐o | Basic Research Laboratory Electronics & Telecommunications Research Institute (etri)

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著作論文

Lower Power and Higher Speed Operations of Phase-Change Memory Device Using Antimony Selenide (Sb_xSe_)
Etching Characteristics of Ge_2Sb_2Te_5 Using High-Density Helicon Plasma for the Nonvolatile Phase-Change Memory Applications
Phase Formations and Electrical Properties of Bi_La_Ti_3O_ and Sm-Doped Bi_La_Sm_Ti_3O_ Thin Films with Annealing Temperature
Material Design Schemes for Single-Transistor-Type Ferroelectric Memory Cells Using Pt/(Bi, La)_4Ti_3O_12/ONO/Si Structures
Fabrication and Characterization of Ferroelectric-Gate Memory Devices Using (Bi, La)4Ti3O12/HfO2 Structure (先端デバイスの基礎と応用に関するアジアワークショップ)
Fabrication and Characterization of Ferroelectric-Gate Memory Devices Using (Bi, La)_4 Ti_3O_/HfO_2 Structure (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
New High-k SrTa_2O_6 Gate Dielectrics Prepared by Plasma-Enhanced Atomic Layer Chemical Vapor Deposition : Surface, interface, and Films
SrTa_2O_6 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition : Surfaces, Interfaces, and Films

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