New High-k SrTa_2O_6 Gate Dielectrics Prepared by Plasma-Enhanced Atomic Layer Chemical Vapor Deposition : Surface, interface, and Films
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-06-15
著者
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Lee Won-jae
Electronics And Telecommunications Research Institute
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Lee Won-jae
Research Center For Electronic Ceramics (rcec) Department Of Advanced Materials Engineering Dong-eui
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YU Byoung-Gon
IT Convergence and Component Laboratory, Electronics and Telecommunications Research Institute
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RYU Sang-OUK
Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI)
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YU Byoung-Gon
Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI)
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Yu B‐g
It Convergence And Component Laboratory Electronics And Telecommunications Research Institute
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Yu Byoung-gon
Micro-electronics Laboratory Electronics And Telecommunications Research Institute
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Ryu S‐o
Basic Research Laboratory Electronics & Telecommunications Research Institute (etri)
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You In-kyu
Basic Research Laboratory Electronics And Telecomunications Research Institute (etri)
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Lee Won-jae
Electronic Ceramic Materials Research Center Korea Advanced Institute Of Science And Technology
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Lee Won-jae
Micro-electronics Laboratory Electronics And Telecommunications Research Institute
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Ryu Sang-ouk
Basic Research Laboratory Electronics & Telecommunications Research Institute (etri)
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CHAE Byung-Gyu
Basic Research Laboratory, ETRI
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JUNG Moon-Youn
Basic Research Laboratory, Electronics and Telecommunications Research Institute
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Jung Moon-youn
Basic Research Laboratory Electronics And Telecommunications Research Institute
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Chae Byung-gyu
Basic Research Laboratory Electronics And Telecommunications Research Institute
関連論文
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- The Etching Behaviors of Pt/SrBi_2Ta_2O_9/NO/Si Structure for MFIS in NDRO-Type FRAM
- The Etching Behaviors of Pt/SrBi_2Ta_2O_9/NO/Si Structure for MFIS in NDRO-Type FRAM
- Electrical Properties of SrBi_2Ta_2O_9/Insulator/Si Structures with Various Insulators
- Formation of Ferroelectric Thin Films for MFIS or MFMIS Structure
- Formation of Ferroelectric Thin Films for MFIS or MFMIS Structure
- Nanoscale Observations on the Degradation Phenomena of Phase-Change Nonvolatile Memory Devices Using Ge_2Sb_2Te_5
- Dry Etching of Ge_2Sb_2Te_5 Thin Films into Nanosized Patterns Using TiN Hard Mask
- Lower Power and Higher Speed Operations of Phase-Change Memory Device Using Antimony Selenide (Sb_xSe_)
- Etching Characteristics of Ge_2Sb_2Te_5 Using High-Density Helicon Plasma for the Nonvolatile Phase-Change Memory Applications
- ED2000-68 / SDM2000-68 Calculation of polarization and mobile charge density in ferroelectric films on Si using TVS (Triangular Voltage Sweep) method
- ED2000-68 / SDM2000-68 Calculation of polarization and mobile charge density in ferroelectric films on Si using TVS (Triangular Voltage Sweep) method
- A Low Operating Voltage(3V) Metal-Ferroelectric-Semiconductor(MFS)FET's Using LiNbO_3/Si(100)Structures For Nonvolatile Memory Application
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- Comparative Analysis of VO_2 Thin Films Prepared on Sapphire and SiO_2/Si Substrates by the Sol-Gel Process
- Polarization-Insensitive Discrimination of Strain and Temperature Based on Long-Period Fiber Grating Inscribed on High-Birefringent Fiber Ended with Faraday Rotator Mirror
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- Properties of MFSFET's with Various Gate Electrodes Using LiNbO_3/Si (100) Structures
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- Phase Formations and Electrical Properties of Bi_La_Ti_3O_ and Sm-Doped Bi_La_Sm_Ti_3O_ Thin Films with Annealing Temperature
- Material Design Schemes for Single-Transistor-Type Ferroelectric Memory Cells Using Pt/(Bi, La)_4Ti_3O_12/ONO/Si Structures
- Fabrication and Characterization of Ferroelectric-Gate Memory Devices Using (Bi, La)4Ti3O12/HfO2 Structure (先端デバイスの基礎と応用に関するアジアワークショップ)
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- New High-k SrTa_2O_6 Gate Dielectrics Prepared by Plasma-Enhanced Atomic Layer Chemical Vapor Deposition : Surface, interface, and Films
- SrTa_2O_6 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition : Surfaces, Interfaces, and Films
- Phase Formations and Electrical Properties of(Sr_xBa_)Bi_2Ta_2O_9 Thin Films
- A Non-destructive Readout Single Transistor FRAM with Floating Well structures
- A Non-destructive Readout Single Transistor FRAM with Floating Well structures
- A Non-destructive Readout Single Transistor FRAM with Floating Well structures
- Growth and Characterization of (Ba_Sr_)TiO_3 Films Epitaxially Grown on (002) GaN/(0006) Al_2O_3 Electrode
- Ferromagnetism of Heteroepitaxial Zn_Cu_xO Films Grown on n-GaN Substrates
- Effects of the Interfacial Layers on the Time-Dependent Leakage Current Characteristics of (Ba,Sr)TiO_3 Thin Films
- Pt/RuO_2 Hybrid Bottom Electrodes and Their Effects on the Electrical Properties of (Ba, Sr)TiO_3 Thin Films
- Polarization-Insensitive Discrimination of Strain and Temperature Based on Long-Period Fiber Grating Inscribed on High-Birefringent Fiber Ended with Faraday Rotator Mirror
- Etching Characteristics of Ge2Sb2Te5 Using High-Density Helicon Plasma for the Nonvolatile Phase-Change Memory Applications
- Growth and Characterization of (Ba0.5Sr0.5)TiO3 Films Epitaxially Grown on (002) GaN/(0006) Al2O3 Electrode
- Ferromagnetism of Heteroepitaxial Zn1-xCuxO Films Grown on n-GaN Substrates
- Phase Formations and Electrical Properties of Bi3.15La0.85Ti3O12 and Sm-Doped Bi3.073La0.85Sm0.077Ti3O12 Thin Films with Annealing Temperature
- Comparative Analysis of VO2 Thin Films Prepared on Sapphire and SiO2/Si Substrates by the Sol–Gel Process
- Material Design Schemes for Single-Transistor-Type Ferroelectric Memory Cells Using Pt/(Bi,La)4Ti3O12/ONO/Si Structures
- Annealing of RuO 2 and Ru Bottom Electrodes and Its Effects on the Electrical Properties of (Ba,Sr)TiO 3 Thin Films