Nanoscale Observations on the Degradation Phenomena of Phase-Change Nonvolatile Memory Devices Using Ge_2Sb_2Te_5
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2007-02-25
著者
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Lee Seung-yun
It Convergence And Component Laboratory Electronics And Telecommunications Research Institute
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YOON Sung-Min
IT Convergence and Component Laboratory, Electronics and Telecommunications Research Institute
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CHOI Kyu-Jeong
IT Convergence and Component Laboratory, Electronics and Telecommunications Research Institute
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LEE Nam-Yeal
IT Convergence and Component Laboratory, Electronics and Telecommunications Research Institute
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PARK Young-Sam
IT Convergence and Component Laboratory, Electronics and Telecommunications Research Institute
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YU Byoung-Gon
IT Convergence and Component Laboratory, Electronics and Telecommunications Research Institute
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Yu B‐g
It Convergence And Component Laboratory Electronics And Telecommunications Research Institute
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Yu Byoung-gon
Micro-electronics Laboratory Electronics And Telecommunications Research Institute
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Yoon Sung-min
It Convergence And Component Laboratory Electronics And Telecommunications Research Institute
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Choi K‐j
It Convergence And Component Laboratory Electronics And Telecommunications Research Institute
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Lee Nam-yeal
It Convergence And Component Laboratory Electronics And Telecommunications Research Institute
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Lee Nam-yeal
Basic Research Laboratory Electronics And Telecommunications Research Institute (etri)
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Lee Nam-yeal
Basic Research Laboratory Electronics And Telecomunications Research Institute (etri)
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Park Young-sam
It Convergence And Component Laboratory Electronics And Telecommunications Research Institute
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Choi Kyu-jeong
It Convergence And Component Laboratory Electronics And Telecommunications Research Institute
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Yu Byoung-gon
It Convergence And Component Laboratory Electronics And Telecommunications Research Institute
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Cho K‐i
Etri Daejon Kor
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