Emitter Scaling Dependence of Mixed-Mode Reliability Degradation in Silicon–Germanium Heterojunction Bipolar Transistors
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概要
- 論文の詳細を見る
The variation of mixed-mode reliability degradation with emitter scaling in silicon–germanium heterojunction bipolar transistors was investigated. While base current density ($J_{\text{B}}$) after reverse emitter–base stress increased with increasing perimeter-to-area ($P/A$) ratio, $J_{\text{B}}$ exhibited a reverse behavior in the case of mixed-mode stress. In addition, the up and down variation of $J_{\text{B}}$ was observed with increasing stress time in some devices of very small $P/A$ ratios. It is considered that these phenomena resulted from self-heating effect depending on device size.
- 2008-07-25
著者
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Lee Seung-yun
It Convergence And Component Laboratory Electronics And Telecommunications Research Institute
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Lee Sang-Heung
IT Convergence and Components Laboratory, Electronics and Telecommunications Research Institute (ETRI), 161 Gajeong-dong, Yuseong-gu, Deajeon 305-350, Korea
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Lee Seung-Yun
IT Convergence and Components Laboratory, Electronics and Telecommunications Research Institute (ETRI), 161 Gajeong-dong, Yuseong-gu, Deajeon 305-350, Korea
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Zhu Chendong
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0250, U.S.A.
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Cressler John
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0250, U.S.A.
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