Etching Characteristics of Ge_2Sb_2Te_5 Using High-Density Helicon Plasma for the Nonvolatile Phase-Change Memory Applications
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2005-07-10
著者
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Lee Seung-yun
It Convergence And Component Laboratory Electronics And Telecommunications Research Institute
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YOON Sung-Min
IT Convergence and Component Laboratory, Electronics and Telecommunications Research Institute
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CHOI Kyu-Jeong
IT Convergence and Component Laboratory, Electronics and Telecommunications Research Institute
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LEE Nam-Yeal
IT Convergence and Component Laboratory, Electronics and Telecommunications Research Institute
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PARK Young-Sam
IT Convergence and Component Laboratory, Electronics and Telecommunications Research Institute
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YU Byoung-Gon
IT Convergence and Component Laboratory, Electronics and Telecommunications Research Institute
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YOON Sung-Min
Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI)
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LEE Nam-Yeal
Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI)
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RYU Sang-OUK
Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI)
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PARK Young-Sam
Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI)
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LEE Seung-Yun
Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI)
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YU Byoung-Gon
Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI)
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CHOI Kyu-Jenong
Basic Research Laboratory, Electronics and Telecommunications Research Institute (ETRI)
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Yu B‐g
It Convergence And Component Laboratory Electronics And Telecommunications Research Institute
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Yu Byoung-gon
Micro-electronics Laboratory Electronics And Telecommunications Research Institute
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Yoon Sung-min
It Convergence And Component Laboratory Electronics And Telecommunications Research Institute
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Ryu S‐o
Basic Research Laboratory Electronics & Telecommunications Research Institute (etri)
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Choi K‐j
It Convergence And Component Laboratory Electronics And Telecommunications Research Institute
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Lee Nam-yeal
It Convergence And Component Laboratory Electronics And Telecommunications Research Institute
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Lee Nam-yeal
Basic Research Laboratory Electronics And Telecommunications Research Institute (etri)
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Lee Nam-yeal
Basic Research Laboratory Electronics And Telecomunications Research Institute (etri)
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Park Young-sam
It Convergence And Component Laboratory Electronics And Telecommunications Research Institute
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Ryu Sang-ouk
Basic Research Laboratory Electronics & Telecommunications Research Institute (etri)
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Cho K‐i
Etri Daejon Kor
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LEE Seung-Yun
IT Convergence and Component Laboratory, Electronics and Telecommunications Research Institute
関連論文
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- The Etching Behaviors of Pt/SrBi_2Ta_2O_9/NO/Si Structure for MFIS in NDRO-Type FRAM
- The Etching Behaviors of Pt/SrBi_2Ta_2O_9/NO/Si Structure for MFIS in NDRO-Type FRAM
- The Etching Behaviors of Pt/SrBi_2Ta_2O_9/NO/Si Structure for MFIS in NDRO-Type FRAM
- Electrical Properties of SrBi_2Ta_2O_9/Insulator/Si Structures with Various Insulators
- Formation of Ferroelectric Thin Films for MFIS or MFMIS Structure
- Formation of Ferroelectric Thin Films for MFIS or MFMIS Structure
- Nanoscale Observations on the Degradation Phenomena of Phase-Change Nonvolatile Memory Devices Using Ge_2Sb_2Te_5
- Dry Etching of Ge_2Sb_2Te_5 Thin Films into Nanosized Patterns Using TiN Hard Mask
- Lower Power and Higher Speed Operations of Phase-Change Memory Device Using Antimony Selenide (Sb_xSe_)