YU Byoung-Gon | Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI)

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著作論文

Lower Power and Higher Speed Operations of Phase-Change Memory Device Using Antimony Selenide (Sb_xSe_)
Etching Characteristics of Ge_2Sb_2Te_5 Using High-Density Helicon Plasma for the Nonvolatile Phase-Change Memory Applications
Material Design Schemes for Single-Transistor-Type Ferroelectric Memory Cells Using Pt/(Bi, La)_4Ti_3O_12/ONO/Si Structures
New High-k SrTa_2O_6 Gate Dielectrics Prepared by Plasma-Enhanced Atomic Layer Chemical Vapor Deposition : Surface, interface, and Films
Etching Characteristics of Ge2Sb2Te5 Using High-Density Helicon Plasma for the Nonvolatile Phase-Change Memory Applications
Material Design Schemes for Single-Transistor-Type Ferroelectric Memory Cells Using Pt/(Bi,La)4Ti3O12/ONO/Si Structures

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