Material Design Schemes for Single-Transistor-Type Ferroelectric Memory Cells Using Pt/(Bi, La)_4Ti_3O_12/ONO/Si Structures
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-11-15
著者
-
YOON Sung-Min
Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI)
-
LEE Nam-Yeal
Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI)
-
RYU Sang-OUK
Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI)
-
YU Byoung-Gon
Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI)
-
Yu B‐g
It Convergence And Component Laboratory Electronics And Telecommunications Research Institute
-
Yoon Sung-min
It Convergence And Component Laboratory Electronics And Telecommunications Research Institute
-
Ryu S‐o
Basic Research Laboratory Electronics & Telecommunications Research Institute (etri)
-
Choi K‐j
It Convergence And Component Laboratory Electronics And Telecommunications Research Institute
-
Lee Nam-yeal
It Convergence And Component Laboratory Electronics And Telecommunications Research Institute
-
Lee Nam-yeal
Basic Research Laboratory Electronics And Telecommunications Research Institute (etri)
-
Lee Nam-yeal
Basic Research Laboratory Electronics And Telecomunications Research Institute (etri)
-
You In-kyu
Basic Research Laboratory Electronics And Telecomunications Research Institute (etri)
-
Cho Seong-mok
Department Of Ceramic Engineering Yonsei University
-
CHO Seong-Mok
Basic Research Laboratory, Electronics and Telecomunications Research Institute (ETRI)
-
SHIN Woong-Chul
Basic Research Laboratory, Electronics and Telecomunications Research Institute (ETRI)
-
CHOI Kyu-Jung
Basic Research Laboratory, Electronics and Telecomunications Research Institute (ETRI)
-
KIM Kwi-Dong
Basic Research Laboratory, Electronics and Telecomunications Research Institute (ETRI)
-
Kim Kwi-dong
Basic Research Laboratory Electronics And Telecomunications Research Institute (etri)
関連論文
- Etching Behavior and Damage Recovery of SrBi_2Ta_2O_9 Thin Films
- The Etching Behaviors of Pt/SrBi_2Ta_2O_9/NO/Si Structure for MFIS in NDRO-Type FRAM
- The Etching Behaviors of Pt/SrBi_2Ta_2O_9/NO/Si Structure for MFIS in NDRO-Type FRAM
- The Etching Behaviors of Pt/SrBi_2Ta_2O_9/NO/Si Structure for MFIS in NDRO-Type FRAM
- Electrical Properties of SrBi_2Ta_2O_9/Insulator/Si Structures with Various Insulators
- Formation of Ferroelectric Thin Films for MFIS or MFMIS Structure
- Nanoscale Observations on the Degradation Phenomena of Phase-Change Nonvolatile Memory Devices Using Ge_2Sb_2Te_5
- Dry Etching of Ge_2Sb_2Te_5 Thin Films into Nanosized Patterns Using TiN Hard Mask
- Lower Power and Higher Speed Operations of Phase-Change Memory Device Using Antimony Selenide (Sb_xSe_)
- Etching Characteristics of Ge_2Sb_2Te_5 Using High-Density Helicon Plasma for the Nonvolatile Phase-Change Memory Applications
- Electrical and Chemical Properties of Photo-Cross-Linked Polymeric Insulating Materials
- ED2000-68 / SDM2000-68 Calculation of polarization and mobile charge density in ferroelectric films on Si using TVS (Triangular Voltage Sweep) method
- ED2000-68 / SDM2000-68 Calculation of polarization and mobile charge density in ferroelectric films on Si using TVS (Triangular Voltage Sweep) method
- A Low Operating Voltage(3V) Metal-Ferroelectric-Semiconductor(MFS)FET's Using LiNbO_3/Si(100)Structures For Nonvolatile Memory Application
- A Low Operating Voltage(3V)Metal-Ferroelectric-Semiconductor(MFS)FET's Using LiNbO_3/Si(100)Structures For Nonvolatile Memory Application
- Structural and Ferroelectric Properties of Sol-Get Deposited Nb-doped Pb[(Sc_Nb_)_Ti_]O_3 Thin Films
- Properties of MFSFET's with Various Gate Electrodes Using LiNbO_3/Si (100) Structures
- Properties of MFSFET's with Various Gate Electrodes Using LiNbO_3/Si (100) Structures
- Properties of MFSFET's with Various Gate Electrodes Using LiNbO_3/Si (100) Structures
- Phase Formations and Electrical Properties of Bi_La_Ti_3O_ and Sm-Doped Bi_La_Sm_Ti_3O_ Thin Films with Annealing Temperature
- Material Design Schemes for Single-Transistor-Type Ferroelectric Memory Cells Using Pt/(Bi, La)_4Ti_3O_12/ONO/Si Structures
- Fabrication and Characterization of Ferroelectric-Gate Memory Devices Using (Bi, La)4Ti3O12/HfO2 Structure (先端デバイスの基礎と応用に関するアジアワークショップ)
- Fabrication and Characterization of Ferroelectric-Gate Memory Devices Using (Bi, La)_4 Ti_3O_/HfO_2 Structure (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
- New High-k SrTa_2O_6 Gate Dielectrics Prepared by Plasma-Enhanced Atomic Layer Chemical Vapor Deposition : Surface, interface, and Films
- SrTa_2O_6 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition : Surfaces, Interfaces, and Films
- Electrical characterization of nonvolatile phase-change memory devices using Sb-rich Ge-Sb-Te alloy films
- Phase Formations and Electrical Properties of(Sr_xBa_)Bi_2Ta_2O_9 Thin Films
- Electrical Characterization of Nonvolatile Phase-Change Memory Devices Using Sb-Rich Ge–Sb–Te Alloy Films
- Etching Characteristics of Ge2Sb2Te5 Using High-Density Helicon Plasma for the Nonvolatile Phase-Change Memory Applications
- Phase Formations and Electrical Properties of Bi3.15La0.85Ti3O12 and Sm-Doped Bi3.073La0.85Sm0.077Ti3O12 Thin Films with Annealing Temperature
- Material Design Schemes for Single-Transistor-Type Ferroelectric Memory Cells Using Pt/(Bi,La)4Ti3O12/ONO/Si Structures
- Longevity of Plastic-Based Organic Light-Emitting Devices by Means of Protective Oils as Passivation Layer
- Electrical and Chemical Properties of Photo-Cross-Linked Polymeric Insulating Materials
- Dry Etching of Ge2Sb2Te5 Thin Films into Nanosized Patterns Using TiN Hard Mask