Electrical characterization of nonvolatile phase-change memory devices using Sb-rich Ge-Sb-Te alloy films

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• Yoon Sung-min

  It Convergence And Component Laboratory Electronics And Telecommunications Research Institute

• Choi K‐j

  It Convergence And Component Laboratory Electronics And Telecommunications Research Institute

• Lee Nam-yeal

  It Convergence And Component Laboratory Electronics And Telecommunications Research Institute

• Lee Nam-yeal

  Basic Research Laboratory Electronics And Telecommunications Research Institute (etri)

• Lee Nam-yeal

  Basic Research Laboratory Electronics And Telecomunications Research Institute (etri)

関連論文

• Electrical Properties of SrBi_2Ta_2O_9/Insulator/Si Structures with Various Insulators
• Nanoscale Observations on the Degradation Phenomena of Phase-Change Nonvolatile Memory Devices Using Ge_2Sb_2Te_5
• Dry Etching of Ge_2Sb_2Te_5 Thin Films into Nanosized Patterns Using TiN Hard Mask
• Lower Power and Higher Speed Operations of Phase-Change Memory Device Using Antimony Selenide (Sb_xSe_)
• Etching Characteristics of Ge_2Sb_2Te_5 Using High-Density Helicon Plasma for the Nonvolatile Phase-Change Memory Applications
• Phase Formations and Electrical Properties of Bi_La_Ti_3O_ and Sm-Doped Bi_La_Sm_Ti_3O_ Thin Films with Annealing Temperature
• Material Design Schemes for Single-Transistor-Type Ferroelectric Memory Cells Using Pt/(Bi, La)_4Ti_3O_12/ONO/Si Structures
• Fabrication and Characterization of Ferroelectric-Gate Memory Devices Using (Bi, La)4Ti3O12/HfO2 Structure (先端デバイスの基礎と応用に関するアジアワークショップ)
• Fabrication and Characterization of Ferroelectric-Gate Memory Devices Using (Bi, La)_4 Ti_3O_/HfO_2 Structure (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
• SrTa_2O_6 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition : Surfaces, Interfaces, and Films
• Electrical characterization of nonvolatile phase-change memory devices using Sb-rich Ge-Sb-Te alloy films
• Phase Formations and Electrical Properties of(Sr_xBa_)Bi_2Ta_2O_9 Thin Films
• Electrical Characterization of Nonvolatile Phase-Change Memory Devices Using Sb-Rich Ge–Sb–Te Alloy Films
• Etching Characteristics of Ge2Sb2Te5 Using High-Density Helicon Plasma for the Nonvolatile Phase-Change Memory Applications
• Phase Formations and Electrical Properties of Bi3.15La0.85Ti3O12 and Sm-Doped Bi3.073La0.85Sm0.077Ti3O12 Thin Films with Annealing Temperature
• Material Design Schemes for Single-Transistor-Type Ferroelectric Memory Cells Using Pt/(Bi,La)4Ti3O12/ONO/Si Structures
• Dry Etching of Ge2Sb2Te5 Thin Films into Nanosized Patterns Using TiN Hard Mask

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