Phase Formations and Electrical Properties of Bi3.15La0.85Ti3O12 and Sm-Doped Bi3.073La0.85Sm0.077Ti3O12 Thin Films with Annealing Temperature

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概要

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• The phase formation and electrical properties of (Bi,La)4Ti3O12 (BLT) thin film and Sm-doped BLT thin films prepared by the chemical solution deposition method on Pt/Ti/SiO2/Si substrates have been investigated. It was observed that the microstructure and electrical properties of BLT thin films dramatically varied with Sm-doping and annealing temperature. The crystallinity and grain size in both types of BLT films were definitely increased with annealing temperatures of BLT films but these films exhibited slightly different crystallographic orientation, which resulted in the different remanent polarization in BLT films. The remanent polarization ($2P_{\text{r}}$) of Sm-doped 130 nm-BLT films annealed at 750°C was about 26 μC/cm2. The Sm-doped BLT films also exhibited reduced leakage current density, compared to BLT films.

• 2004-09-15

著者

• Lee Nam-yeal

  Basic Research Laboratory Electronics And Telecommunications Research Institute (etri)

• Lee Won-jae

  Electronic Ceramic Materials Research Center Korea Advanced Institute Of Science And Technology

• Ryu Sang-ouk

  Basic Research Laboratory Electronics & Telecommunications Research Institute (etri)

• Yoon Soon-gil

  Department Of Materials And Engineering Chungnam Notional University

• Yoon Soon-Gil

  Department of Materials Science and Engineering, Chungnam National University, Yusong-gu, Daejon, Korea

• Ryu Sang-Ouk

  Basic Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 161 Kajong-dong, Yusong-gu, Daejon 305-600, Korea

• Lee Nam-Yeal

  Basic Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 161 Kajong-dong, Yusong-gu, Daejon 305-600, Korea

• Lee Won-Jae

  Electronic Ceramics Center (ECC), Department of Information Materials Engineering, Dong-Eui University, San 24, Gaya-dong, Busanjin-Gu, Busan 614-714, Korea

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