Bismuth-Based Pyrochlore Thin Films Deposited at Low Temperatures for Embedded Capacitor Applications

概要

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Various bismuth-based pyrochlore films were deposited on copper clad laminate substrates at temperatures below 150 °C by pulsed laser deposition for embedded capacitor applications. The films showed smooth and dense morphologies during deposition at room temperature. Bi2Mg2/3Nb4/3O7 (BMN) pyrochlore films showed the most stable dielectric properties and leakage current behaviors as a function of film thickness and deposition temperature. The capacitance density and breakdown field of 150-nm-thick-BMN films deposited at 150 °C were approximately 325 nF/cm2 and 410 kV/cm, respectively. The BMN films showed a dielectric constant of 55, a dielectric loss of 1.6% at 100 kHz, and a leakage current density of $1\times 10^{-8}$ A/cm2 at an applied field of 250 kV/cm. Metal/insulator/metal (MIM) capacitors including various bismuth-based pyrochlore films are expected to be promising candidates for printed circuit board (PCB)-embedded capacitors.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2006-09-30