Bottom Electrode Structures of Pt/RuO_2/Ru on Polycrystalline Silicon for Low Temperature (Ba, Sr)TiO_3 Thin Film Deposition

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1999-09-30

著者

• Lee Jae-chang

  Department Of Materials Engineering Chungnam National University

• Choi E‐s

  Chungnam National Univ. Taejon Kor

• Choi Eun-Suck

  Department of Materials Engineering, Chungnam National University

• Hwang Jun-Sik

  Department of Materials Engineering, Chungnam National University

• Yoon Soon-Gil

  Department of Materials Engineering, Chungnam National University

• Lee Jeong-chang

  Department Of Applied Physics School Of Engineering The University Of Tokyo

• Choi Eun-suck

  Department Of Materials Engineering Chungnam National University

• Yoon S‐g

  Chungnam National Univ. Daejon Kor

• Yoon Soon-gil

  Department Of Materials And Engineering Chungnam Notional University

• Hwang Jun-sik

  Department Of Materials Engineering Chungnam National University

関連論文

• Bottom Electrode Structures of Pt/RuO_2/Ru on Polycrystalline Silicon for Low Temperature (Ba, Sr)TiO_3 Thin Film Deposition
• Bottom Electrode Structures of Pt/Ru Deposited on Polycrystalline Silicon for Semiconductor Memory Capacitors
• Bottom Electrode Structures of Pt/Ru Deposited on Polycrystalline Silicon for Semiconductor Memory Capacitors
• Bottom Electrode Structures of Pt/Ru Deposited on Polycrystalline Silicon for Semiconductor Memory Capacitors
• Ferroelectric Properties of SrBi_2Ta_2O_9 Thin Films Deposited on Various Bottom Electrodes by a Modified Radio-Frequency Magnetron Sputtering Technique
• Down-Conversion of Microwave Optoelectronic Signals in a GaAs Microstrip Ring Resonator
• Effect of Ni Doping on Improvement of the Tanability and Dielectric Loss of Ba_Sr_TiO_3 Thin Films for Microwave Thnable Devices : Electrical Properties of Condonsed Matter
• Phase Formations and Electrical Properties of Bi_La_Ti_3O_ and Sm-Doped Bi_La_Sm_Ti_3O_ Thin Films with Annealing Temperature
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• Bismuth-Based Pyrochlore Thin Films Deposited at Low Temperatures for Embedded Capacitor Applications
• Improvement in Structural and Electrical Properties of (Ba0.5Sr0.5)TiO3 Capacitors Using (Ba0.5Sr0.5)RuO3 Conductive Layers at (Ba0.5Sr0.5)TiO3/Pt Interface

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