Characterization of Pb_<1-x> La_x TiO_3 Thin Films by the Radio Frequency Magnetron Sputtering Technique

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概要

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• Microstructures and electrical properties of polycrystalline and oriented (Pb_<1-x> La_x) TiO_3 (PLT) thin films deposited by rf magnetron sputtering using a ceramic (Pb<0.7> La<0.3>) TiO_3 target having 20 mo1% excess PbO were investigated. The grain size of oriented films deposited on La<0.5> Sr<0.5> CoO_3(LSCO)/MgO was larger than that of polycrystalline PLT films on LSCO/Pt/Ti/SiO_2/Si substrates. The dielectric constant and the dissipation factor of polycrystalline films measured at 10kHz were 340 and 0.014, respectively. On the other hand, the dielectric constant and the dissipation factor of oriented films were 810 and 0.08, respectively. Both the polycrystalline and the oriented PLT films deposited at 5O0℃ exhibited a paraelectric properties. The leakage current densities of the polycrystalline and the oriented PLT films were about 8.0×10^<-8> and 2.5×1O^<-7> A/cm^2 at 10 kV/cm, respectively.

• 社団法人応用物理学会の論文
• 1998-04-15

著者

• Yoon Soon-gil

  Department Of Materials And Engineering Chungnam Notional University

• Yoon Soon-gil

  Department Of Materials Engineering College Of Engineering Chungnam Natioztal University:cprc (ceram

• Park S‐s

  Sangju National Univ. Kyungbuk Kor

• PARK Sang-Shik

  Department of Advanced Materials Engineering, Sangju National University

• CHAE Su-tin

  Department of Materials Engineering, College of Engineering, Chungnam Natioztal University

• Park Sang-shik

  Department Of Advanced Materials Engineering Sangju National University

• Chae Su-tin

  Department Of Materials Engineering College Of Engineering Chungnam Natioztal University

• Chae Su-Jin

  Department of Materials Engineering, College of Engineering, Chungnam Natioztal University

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