SrTa_2O_6 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition : Surfaces, Interfaces, and Films
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2001-12-15
著者
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Lee Won-jae
Electronics And Telecommunications Research Institute
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LEE Won-Jae
Micro-Electronics Technology Laboratory, ETRI
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YOU In-Kyu
Micro-Electronics Technology Laboratory, ETRI
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YU Byoung-Gon
Micro-Electronics Technology Laboratory, ETRI
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Lee Won-jae
Research Center For Electronic Ceramics (rcec) Department Of Advanced Materials Engineering Dong-eui
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YOON Sung-Min
IT Convergence and Component Laboratory, Electronics and Telecommunications Research Institute
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CHOI Kyu-Jeong
IT Convergence and Component Laboratory, Electronics and Telecommunications Research Institute
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YU Byoung-Gon
IT Convergence and Component Laboratory, Electronics and Telecommunications Research Institute
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Yu B‐g
It Convergence And Component Laboratory Electronics And Telecommunications Research Institute
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Yu Byoung-gon
Micro-electronics Laboratory Electronics And Telecommunications Research Institute
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Yoon Sung-min
It Convergence And Component Laboratory Electronics And Telecommunications Research Institute
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Ryu S‐o
Basic Research Laboratory Electronics & Telecommunications Research Institute (etri)
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Choi K‐j
It Convergence And Component Laboratory Electronics And Telecommunications Research Institute
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Yoon Soon-Gil
Department of Materials Engineering, Chungnam National University
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You In-kyu
Basic Research Laboratory Electronics And Telecomunications Research Institute (etri)
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You In-kyu
Micro-electronics Technology Lab. Etri
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Lee Won-jae
Electronic Ceramic Materials Research Center Korea Advanced Institute Of Science And Technology
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Lee Won-jae
Micro-electronics Laboratory Electronics And Telecommunications Research Institute
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RYU Sang-Ouk
Micro-Electronics Technology Laboratory
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CHO Kyoung-Ik
Micro-Electronics Technology Laboratory
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LEE Chun-Su
Genitech Co., Ltd.
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Yoon Soon-gil
Department Of Materials And Engineering Chungnam Notional University
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Lee Chun-su
Genitech Co. Ltd.
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Cho K‐i
Etri Daejon Kor
関連論文
- Etching Behavior and Damage Recovery of SrBi_2Ta_2O_9 Thin Films
- The Etching Behaviors of Pt/SrBi_2Ta_2O_9/NO/Si Structure for MFIS in NDRO-Type FRAM
- The Etching Behaviors of Pt/SrBi_2Ta_2O_9/NO/Si Structure for MFIS in NDRO-Type FRAM
- The Etching Behaviors of Pt/SrBi_2Ta_2O_9/NO/Si Structure for MFIS in NDRO-Type FRAM
- Electrical Properties of SrBi_2Ta_2O_9/Insulator/Si Structures with Various Insulators
- Formation of Ferroelectric Thin Films for MFIS or MFMIS Structure
- Formation of Ferroelectric Thin Films for MFIS or MFMIS Structure
- Nanoscale Observations on the Degradation Phenomena of Phase-Change Nonvolatile Memory Devices Using Ge_2Sb_2Te_5
- Dry Etching of Ge_2Sb_2Te_5 Thin Films into Nanosized Patterns Using TiN Hard Mask
- Lower Power and Higher Speed Operations of Phase-Change Memory Device Using Antimony Selenide (Sb_xSe_)
- Etching Characteristics of Ge_2Sb_2Te_5 Using High-Density Helicon Plasma for the Nonvolatile Phase-Change Memory Applications
- Bottom Electrode Structures of Pt/RuO_2/Ru on Polycrystalline Silicon for Low Temperature (Ba, Sr)TiO_3 Thin Film Deposition
- Ferroelectric Properties of SrBi_2Ta_2O_9 Thin Films Deposited on Various Bottom Electrodes by a Modified Radio-Frequency Magnetron Sputtering Technique
- ED2000-68 / SDM2000-68 Calculation of polarization and mobile charge density in ferroelectric films on Si using TVS (Triangular Voltage Sweep) method
- ED2000-68 / SDM2000-68 Calculation of polarization and mobile charge density in ferroelectric films on Si using TVS (Triangular Voltage Sweep) method
- A Low Operating Voltage(3V) Metal-Ferroelectric-Semiconductor(MFS)FET's Using LiNbO_3/Si(100)Structures For Nonvolatile Memory Application
- A Low Operating Voltage(3V)Metal-Ferroelectric-Semiconductor(MFS)FET's Using LiNbO_3/Si(100)Structures For Nonvolatile Memory Application
- Effect of Ni Doping on Improvement of the Tanability and Dielectric Loss of Ba_Sr_TiO_3 Thin Films for Microwave Thnable Devices : Electrical Properties of Condonsed Matter
- Annealing of RuO_2 and Ru Bottom Electrodes and Its Effects on the Electrical Properties of (Ba,Sr)TiO_3 Thin Films
- Structural and Ferroelectric Properties of Sol-Get Deposited Nb-doped Pb[(Sc_Nb_)_Ti_]O_3 Thin Films
- Properties of MFSFET's with Various Gate Electrodes Using LiNbO_3/Si (100) Structures
- Properties of MFSFET's with Various Gate Electrodes Using LiNbO_3/Si (100) Structures
- Properties of MFSFET's with Various Gate Electrodes Using LiNbO_3/Si (100) Structures
- Phase Formations and Electrical Properties of Bi_La_Ti_3O_ and Sm-Doped Bi_La_Sm_Ti_3O_ Thin Films with Annealing Temperature
- Material Design Schemes for Single-Transistor-Type Ferroelectric Memory Cells Using Pt/(Bi, La)_4Ti_3O_12/ONO/Si Structures
- Fabrication and Characterization of Ferroelectric-Gate Memory Devices Using (Bi, La)4Ti3O12/HfO2 Structure (先端デバイスの基礎と応用に関するアジアワークショップ)
- Fabrication and Characterization of Ferroelectric-Gate Memory Devices Using (Bi, La)_4 Ti_3O_/HfO_2 Structure (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
- New High-k SrTa_2O_6 Gate Dielectrics Prepared by Plasma-Enhanced Atomic Layer Chemical Vapor Deposition : Surface, interface, and Films
- SrTa_2O_6 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition : Surfaces, Interfaces, and Films
- Electrical characterization of nonvolatile phase-change memory devices using Sb-rich Ge-Sb-Te alloy films
- Phase Formations and Electrical Properties of(Sr_xBa_)Bi_2Ta_2O_9 Thin Films
- A Non-destructive Readout Single Transistor FRAM with Floating Well structures
- A Non-destructive Readout Single Transistor FRAM with Floating Well structures
- A Non-destructive Readout Single Transistor FRAM with Floating Well structures
- Growth and Characterization of (Ba_Sr_)TiO_3 Films Epitaxially Grown on (002) GaN/(0006) Al_2O_3 Electrode
- Ferromagnetism of Heteroepitaxial Zn_Cu_xO Films Grown on n-GaN Substrates
- Influence of Narrow Transverse Slit in Ferroelectric Based Voltage Tunable Phase Shifter
- Effects of the Interfacial Layers on the Time-Dependent Leakage Current Characteristics of (Ba,Sr)TiO_3 Thin Films
- Pt/RuO_2 Hybrid Bottom Electrodes and Their Effects on the Electrical Properties of (Ba, Sr)TiO_3 Thin Films
- Improvement in Structural and Electrical Properties of (Ba_Sr_)TiO_3 Capacitors Using (Ba_Sr_)RuO_3 Conductive Layers at (Ba_Sr_)TiO_3/Pt Interface
- Effects of Chamber Pressure on Composition and Electrical Properties of Zr-Modified (Ba_ Sr_x)TiO_3 Thin Films Grown by Sputtering
- Characterization of Aluminum Nitride Thin Films on Silicon Substrates Grown by Plasma Assisted Molecular Beam Epitaxy
- Electrical Characterization of Nonvolatile Phase-Change Memory Devices Using Sb-Rich Ge–Sb–Te Alloy Films
- Characterization of Pb_ La_x TiO_3 Thin Films by the Radio Frequency Magnetron Sputtering Technique
- Growth and Characterization of (Ba0.5Sr0.5)TiO3 Films Epitaxially Grown on (002) GaN/(0006) Al2O3 Electrode
- Ferromagnetism of Heteroepitaxial Zn1-xCuxO Films Grown on n-GaN Substrates
- Phase Formations and Electrical Properties of Bi3.15La0.85Ti3O12 and Sm-Doped Bi3.073La0.85Sm0.077Ti3O12 Thin Films with Annealing Temperature
- Bismuth-Based Pyrochlore Thin Films Deposited at Low Temperatures for Embedded Capacitor Applications
- Material Design Schemes for Single-Transistor-Type Ferroelectric Memory Cells Using Pt/(Bi,La)4Ti3O12/ONO/Si Structures
- Improvement in Structural and Electrical Properties of (Ba0.5Sr0.5)TiO3 Capacitors Using (Ba0.5Sr0.5)RuO3 Conductive Layers at (Ba0.5Sr0.5)TiO3/Pt Interface
- Annealing of RuO 2 and Ru Bottom Electrodes and Its Effects on the Electrical Properties of (Ba,Sr)TiO 3 Thin Films
- Dry Etching of Ge2Sb2Te5 Thin Films into Nanosized Patterns Using TiN Hard Mask