Yoon Soon-gil | Department Of Materials And Engineering Chungnam Notional University

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著作論文

Bottom Electrode Structures of Pt/RuO_2/Ru on Polycrystalline Silicon for Low Temperature (Ba, Sr)TiO_3 Thin Film Deposition
Ferroelectric Properties of SrBi_2Ta_2O_9 Thin Films Deposited on Various Bottom Electrodes by a Modified Radio-Frequency Magnetron Sputtering Technique
Effect of Ni Doping on Improvement of the Tanability and Dielectric Loss of Ba_Sr_TiO_3 Thin Films for Microwave Thnable Devices : Electrical Properties of Condonsed Matter
Fabrication and Characterization of Ferroelectric-Gate Memory Devices Using (Bi, La)4Ti3O12/HfO2 Structure (先端デバイスの基礎と応用に関するアジアワークショップ)
Fabrication and Characterization of Ferroelectric-Gate Memory Devices Using (Bi, La)_4 Ti_3O_/HfO_2 Structure (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
SrTa_2O_6 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition : Surfaces, Interfaces, and Films
Influence of Narrow Transverse Slit in Ferroelectric Based Voltage Tunable Phase Shifter
Effects of Chamber Pressure on Composition and Electrical Properties of Zr-Modified (Ba_ Sr_x)TiO_3 Thin Films Grown by Sputtering
Characterization of Aluminum Nitride Thin Films on Silicon Substrates Grown by Plasma Assisted Molecular Beam Epitaxy
Characterization of Pb_ La_x TiO_3 Thin Films by the Radio Frequency Magnetron Sputtering Technique
Growth and Characterization of (Ba0.5Sr0.5)TiO3 Films Epitaxially Grown on (002) GaN/(0006) Al2O3 Electrode
Phase Formations and Electrical Properties of Bi3.15La0.85Ti3O12 and Sm-Doped Bi3.073La0.85Sm0.077Ti3O12 Thin Films with Annealing Temperature
Bismuth-Based Pyrochlore Thin Films Deposited at Low Temperatures for Embedded Capacitor Applications
Improvement in Structural and Electrical Properties of (Ba0.5Sr0.5)TiO3 Capacitors Using (Ba0.5Sr0.5)RuO3 Conductive Layers at (Ba0.5Sr0.5)TiO3/Pt Interface

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