Yoon Sung-Min | Electronics and Telecommunications Res. Inst. (ETRI)
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概要
関連著者
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Yoon Sung-Min
Electronics and Telecommunications Res. Inst. (ETRI)
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石原 宏
東京工業大学
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藤崎 芳久
日立製作所中央研究所
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徳光 永輔
東京工業大学 精密工学研究所
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石原 宏
東京工業大学大学院総合理工学研究科
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Lee Gwang-Geun
東京工業大学精密工学研究所
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Yoon Joo-Won
東京工業大学総合理工学研究科
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YOON Sung-Min
IT Convergence and Component Laboratory, Electronics and Telecommunications Research Institute
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CHOI Kyu-Jeong
IT Convergence and Component Laboratory, Electronics and Telecommunications Research Institute
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LEE Nam-Yeal
IT Convergence and Component Laboratory, Electronics and Telecommunications Research Institute
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YU Byoung-Gon
IT Convergence and Component Laboratory, Electronics and Telecommunications Research Institute
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Yu B‐g
It Convergence And Component Laboratory Electronics And Telecommunications Research Institute
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Yu Byoung-gon
Electronics And Telecommunications Research Institute
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Yu Byoung-gon
Micro-electronics Laboratory Electronics And Telecommunications Research Institute
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Yoon Sung-min
It Convergence And Component Laboratory Electronics And Telecommunications Research Institute
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Yoon Sung-min
Etri
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Ryu S‐o
Basic Research Laboratory Electronics & Telecommunications Research Institute (etri)
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Choi K‐j
It Convergence And Component Laboratory Electronics And Telecommunications Research Institute
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Lee Nam-yeal
It Convergence And Component Laboratory Electronics And Telecommunications Research Institute
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Lee Nam-yeal
Basic Research Laboratory Electronics And Telecommunications Research Institute (etri)
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Lee Nam-yeal
Basic Research Laboratory Electronics And Telecomunications Research Institute (etri)
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Yoon Soon-Gil
Department of Materials Engineering, Chungnam National University
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Shin W‐c
Basic Research Laboratory Electronics And Telecomunications Research Institute (etri)
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You In-kyu
Basic Research Laboratory Electronics And Telecomunications Research Institute (etri)
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Cho Seong-mok
Department Of Ceramic Engineering Yonsei University
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徳光 永輔
東京工業大学精密工学研究所
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徳光 永輔
東京工業大学精密工学研究所:東北大学電気通信研究所it-21センター
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徳光 永輔
東京工業大学
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YOU In-Kyu
Electronics & Telecommunications Research Institute (ETRI)
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RYU Sang-Ouk
Electronics & Telecommunications Research Institute (ETRI)
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LEE Nam-Yeal
Electronics & Telecommunications Research Institute (ETRI)
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CHO Seong-Mok
Electronics & Telecommunications Research Institute (ETRI)
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KIM Kwi-Dong
Electronics & Telecommunications Research Institute (ETRI)
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SHIN Woong-Chul
Electronics & Telecommunications Research Institute (ETRI)
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CHOI Kyu-Jeong
Department of Material Engineering, Chungnam National University
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Kim Kwi-dong
Basic Research Laboratory Electronics And Telecomunications Research Institute (etri)
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Yoon Soon-gil
Department Of Materials And Engineering Chungnam Notional University
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Cho K‐i
Etri Daejon Kor
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Yu Byoung
Electronics And Telecommunications Res. Inst. Daejeon Kor
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Yu Byoung
Electronics And Telecommunications Research Institute (etri)
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Lee Seung-yun
Electronics And Telecommunications Research Institute Microelectronics Laboratory
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Lee Seung-yun
Electronics And Telecommunications Research Institute (etri)
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Park Young
Electronics And Telecommunications Research Institute (etri)
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Yoon Sung-min
Electronics And Telecommunications Research Institute (etri)
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LIM Jung
Electronics and Telecommunications Research Institute (ETRI)
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YANG Woo
Electronics and Telecommunications Research Institute (ETRI)
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Yang Woo
Electronics And Telecommunications Research Institute
著作論文
- 有機強誘電体P(VDF-TrFE)と無機酸化物半導体IGZOを用いた強誘電体ゲート薄膜トランジスタの作製と評価(薄膜(Si,化合物,有機,フレキシブル)機能デバイス・材料・評価技術及び一般)
- 有機強誘電体P(VDF-TrFE)と無機酸化物半導体IGZOを用いた強誘電体ゲート薄膜トランジスタの作製と評価(薄膜(Si,化合物,有機,フレキシブル)機能デバイス・材料・評価技術及び一般)
- Stress Reduction of Ge_2Sb_2Te_5 by Inhibiting Oxygen Diffusion
- Fabrication and Characterization of Ferroelectric-Gate Memory Devices Using (Bi, La)4Ti3O12/HfO2 Structure (先端デバイスの基礎と応用に関するアジアワークショップ)
- Fabrication and Characterization of Ferroelectric-Gate Memory Devices Using (Bi, La)_4 Ti_3O_/HfO_2 Structure (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
- 有機強誘電体P(VDF-TrFE)と無機酸化物半導体IGZOを用いた強誘電体ゲート薄膜トランジスタの作製と評価
- 有機強誘電体P(VDF-TrFE)と無機酸化物半導体IGZOを用いた強誘電体ゲート薄膜トランジスタの作製と評価