Ferromagnetism of Heteroepitaxial Zn1-xCuxO Films Grown on n-GaN Substrates

概要

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Ferromagnetic Zn1-xCuxO (ZnO:Cu) films were epitaxially grown on n-GaN(0001)/Al2O3(0001) by radio-frequency magnetron sputtering at a substrate temperature as low as 700°C. X-ray diffraction $\theta$-$2\theta$ scans, $\phi$-scans, and surface morphology studies revealed the degree of crystallinity, epitaxiality, and grain size. The full-width at half-maximum of the peak for the ZnO:Cu films deposited on GaN was below 0.18° according to $\omega$-scans. The chemical bonding states and depth profiles of the films were investigated by X-ray photoelectron spectroscopy (XPS) and with a glow discharge spectrometer (GDS). A magnetic property measurement revealed that Cu-doped ZnO films exhibit ferromagnetic behavior with a strong exchange interaction between $sp$-band carriers and localized $d$ electrons at room temperature.
2004-11-01