Ferroelectric Properties of Mn-Doped Bi3.6La0.4Ti3O12 Thin Films Prepared under Different Annealing Conditions

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概要

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• Ferroelectric Bi3.6La0.4Ti3O12 (BLT) and Mn-doped (0.1 wt%, 0.2 wt%, and 0.3 wt%) BLT thin films were prepared by sol-gel processing. In the X-ray diffraction (XRD) results, all films exhibited a randomly oriented perovskite phase. Concerning surface morphology, the grain boundaries of the Mn-doped (0.2 wt%) BLT thin film are more closely packed than those of the nondoped BLT film without the presence of many crevices and cracks around the grain boundaries due to the volatilization of the Bi components at high temperature. The remanent polarization of the stoichiometric, 0.1 wt%, 0.2 wt% and 0.3 wt% Mn-doped BLT films annealed at a heating rate of 50°C/h, were 14 μC/cm2, 18 μC/cm2, 31 μC/cm2 and 13 μC/cm2, respectively. The 0.2 wt% Mn-doped BLT thin film is a good candidate for ferroelectric memory cells and nonvolatile random access memory (NvRAM) applications.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-09-15

著者

• Kim Jong-pil

  Nano-surface Analysis Team Korea Basic Science Institute

• Hwang Jae-yeol

  Nano-surface Analysis Team Korea Basic Science Institute

• Jeong Se-young

  School Of Nano-science And Technology Pusan National University

• CHO Chae-Ryong

  Nano-Surface Analysis Team, Korea Basic Science Institute

• Ryu Min-ki

  Department Of Physics Pusan National University

• Jang Min-su

  Department Of Physics And Research Center For Dielectric And Advanced Matter Physics Pusan National

• Ryu Min-Ki

  Department of Physics, Pusan National University, Busan 609-735, Korea

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