A Low Operating Voltage(3V) Metal-Ferroelectric-Semiconductor(MFS)FET's Using LiNbO_3/Si(100)Structures For Nonvolatile Memory Application

概要

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N-channel metal-ferroelectric-semiconductor field-effect-transistors(MFSFET's)by using rapid thermal annealed LiNbO_3/Si(100)structures were fabricated and demonstrated nonvolatile memory operations of the MFSFET's. The estimated field-effect electron mobility and transconductance on a linear region of the fabricated FET were 600 cm^2/V・s and 0.16 mS/mm, respectively. The drain current of the "on"state was more than 4 orders of magnitude larger than the "off"state current at the same "read"gate voltage of 0.5V, which means the memory operation of the MFSFET. A write voltage as low as ±3 V, which is applicable to low power integrated circuits, was used for polarization reversal.
社団法人電子情報通信学会の論文
1998-07-24