Determination of Flat-Band Voltages for Fully Depleted Silicon-on-Insulator (SOI) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET's)

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1992-09-15

著者

• Lyu Jong-son

  Electronics And Telecommunications Research Institute

• NAM Kee-Soo

  Electronics and Telecommunications Research Institute

• LEE Choochon

  Department of Physics, Korea Advanced Institute of Science and Technology

• Nam K‐s

  Electronics And Telecommunication Res. Inst. Taejon Kor

• Lee Choochon

  Department Of Physics Kaist

関連論文

• Determination of the Interface Trap Density in Metal Oxide Semiconductor Field-Effect Transistor through Subthreshold Slope Measurement
• Determination of Flat-Band Voltages for Fully Depleted Silicon-on-Insulator (SOI) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET's)
• A Low Operating Voltage(3V) Metal-Ferroelectric-Semiconductor(MFS)FET's Using LiNbO_3/Si(100)Structures For Nonvolatile Memory Application
• A Low Operating Voltage(3V)Metal-Ferroelectric-Semiconductor(MFS)FET's Using LiNbO_3/Si(100)Structures For Nonvolatile Memory Application
• ANNEALING BEHAVIOR OF BIAS INDUCED DEGRADATION IN A-SI : H TFTs (Korea-Japan Joint Symposium on Information Display)
• Thin-Film Transistors with Polycrystalline Silicon Prepared by a New Annealing Method
• Field-Effect Conductance Activation Energy in Polycrystalline Silicon Thin-Film Transistors after Bias Stress
• Defect Creation in a-Si:H Thin Film Transistors by Bias-Stress
• Microcrystalline Silicon Films Deposited by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition Using Helium Gas
• Substrate-Dependent Growth of Polycrystalline Silicon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition Using SiF_4 and H_2 Gases
• HIGH PERFORMANCE A-SI TFT PRODUCED BY RP-CVD
• Performance and Stability of a-Si:H Thin Film Transistors with SiO_2 Gate Insulator

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