Substrate-Dependent Growth of Polycrystalline Silicon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition Using SiF_4 and H_2 Gases

概要

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The growth of polycrystalline silicon films deposited on two different types of substrates by rf plasma-enhanced chemical vapor deposition using SiF_4 and H_2 gases was investigated. We observed that on the glass strbstrates, small grains grew and grain boundaries were not clear at the early stage of deposition (≤ 100 nm) before the growth of a columnar crystalline layer. However, on the SiO_2 substrates, after the growth of a thin amorphous layer (〜10 nm), direct growth of a columnar crystalline layer was observed. Surface roughness of the films increases with the film thickness on both substrates and is larger on glass substrate than on SiO_2 substrate. The growth mechanism of the poly-Si films deposited on these two types of substrates was also discussed.
社団法人応用物理学会の論文
1995-09-15