Field-Effect Conductance Activation Energy in Polycrystalline Silicon Thin-Film Transistors after Bias Stress
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-04-15
著者
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Kim S‐y
Anam Semiconductor Co. Inc. Bucheon Kor
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LEE Choochon
Department of Physics, Korea Advanced Institute of Science and Technology
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Song Yoon-Ho
Semiconductor Division, Electronics and Telecommunications Research Institute
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Song Yoon-ho
Semiconductor Technology Devision Electronics And Telecommunication Research Institute
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Nam Kee-soo
Semiconductor Technology Devision Electronics And Telecommunication Research Institute
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Lee Choochon
Department Of Physics Kaist
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KIM Seo-Yoon
Department of Physics, Korea Advanced Institute of Science and Technology
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Kim Seo-yoon
Department Of Physics Korea Advanced Institute Of Science And Technology
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- ANNEALING BEHAVIOR OF BIAS INDUCED DEGRADATION IN A-SI : H TFTs (Korea-Japan Joint Symposium on Information Display)
- Field-Effect Conductance Activation Energy in Polycrystalline Silicon Thin-Film Transistors after Bias Stress
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- Defect Creation in a-Si:H Thin Film Transistors by Bias-Stress
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