HIGH PERFORMANCE A-SI TFT PRODUCED BY RP-CVD
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概要
- 論文の詳細を見る
We have studied the fabrication of hydrogenated amorphous silicon(a-Si : H) thin film transistors by ramots-plasma chemical vapour deposition(RP-CVD). The effects of rf power, buffer layer between the gate insulator and a-Si : H, ohmic contact, and the surface oxidation on the performances on the a-Si : H TFT's have been investigated. As a result of the optimization of preparation conditions, we have made a TFT with a mobility of 1.2 cm^2/Vs, threshold voltage of 2.0V, and on/off current ratio of >10^6.
- 社団法人映像情報メディア学会の論文
- 1991-11-01
著者
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Jang Jin
Department Of Biochemistry School Of Medicine Kyungpook National University
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Jung Moon
Department Of Physics Kyung Hee University
-
Lee Choochon
Department Of Physics Kaist
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YOO Sunsung
Department of Physics, Kyung Hee University
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Yoo Sunsung
Department Of Physics Kyung Hee University
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Jung Moon
Department Of Pathology College Of Medicine Pochon Cha University
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