ED2000-76 / SDM2000-76 SMC of a-Si in an electric field and its application to TFTs
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概要
- 論文の詳細を見る
We studied the Ni-silicide mediated crystallization of hydrogenated amorphous silicon (a-Si : H) in the presence of an electric filed and its application to high performance thin film transistors. In the initial stage of thermal annealing of a-Si : H having Ni particles on it, the NiSi_2 precipitate was formed at temperatures less than 400°C and act as nuclei sites. Needlelike crystallites are developed as a result of the migration of NiSi_2 precipitates in a-S : H network. The crystallization speed increases with increasing the electric field strength, which is due to the accelerated migration of NiSi_2 precipitates in a-Si : H network. The a-Si : H was fully crystallized at 500°C within 10 min. A poly-Si TFT using the Ni-SMC poly-Si had a field-effect mobility of 120 cm^2/Vs and a threshold voltage of 1.5V, and a sub-threshold slope of 0.5 V/dec.
- 社団法人電子情報通信学会の論文
- 2000-06-23
著者
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Jang Jin
Department Of Biochemistry School Of Medicine Kyungpook National University
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Park Seong
Department Of General Surgery College Of Medicine Chung-ang University
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CHO Kyu
Department of Physics, Sogang University
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YOON Soo
Department of Physics, Kyung Hee University
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Kim Kyung
Department Of Physics Kyung Hee University
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Kim Kyung
Department Of Anesthesia And Pain Medicine School Of Medicine Pusan National University
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Park Seong
Department Of Physics Kyung Hee University
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Yoon Soo
Department Of Physics Kyung Hee University
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Yoon Soo
Department Of Clinical Pathology Korea University Medical School
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Cho Kyu
Department Of Physics Kyung Hee University
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PARK Seong
Department of Computer Engineering, Chonnam National University
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