Fabrication and estimation of characteristics for Nb-silicide FEAs
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概要
- 論文の詳細を見る
Electron emission currents and stability in the silicon-tip field emission arrays (FEAs) have bee improved by silicide formation on silicon using Nb (Niobium). The formation of Nb-silicide was confirmed by X-Ray Diffraction (XRD) data. The turn-on voltage of silicon-tip FEAs was decreased from 64 to 47V and the emission current fluctuation was decreased from 5% to 2%.
- 社団法人電子情報通信学会の論文
- 1999-03-18
著者
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Ju B
Korea Institute Of Science And Technology
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Ju Byeong
Division Of Electronics And Information Technology Kist
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Jang Jin
Department of Physics, Kyunghee University Hoigi-dong
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Park Jae
Electronics Telecommunications Research Institute
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Jang J
Kyunghee University
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Oh M
Korea Institute Of Science And Technology
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Oh M
Samsung Electronics Kyoungi‐do Kor
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Oh Myung
Division Of Electronics And Information Technology Kist
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Jang Jin
Department Of Physics Kyunghee University
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Jang Jin
Department Of Biochemistry School Of Medicine Kyungpook National University
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Park Jae
Electronic Materials And Devices Research Center Kist
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Jang J
Korea Institute Of Science And Technology
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Lee Sanjo
Electronic Materials and Devices Research Center, KIST
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Ju Byeong
Electronic Materials and Devices Research Center, KIST
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Jeon D.
Department of Physics, Myong Ji University
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Oh Myung
Electronic Materials and Devices Research Center, KIST
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Lee S
Electronic Materials And Devices Research Center Kist
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Lee Sanjo
Myong Ji University Department Of Physics
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Jeon D.
Department Of Physics Myong Ji University
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Jeon D.
Department of Physics Education, Seoul National University, Seoul 151-747, Korea
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