Fabrication and Characterization of Strip-shaped Diamond Field Emitter Arrays
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概要
- 論文の詳細を見る
Strip-shaped diamond field emitter arrays were fabricated by using a transfer mold technique. V-grooves were formed on a single crystalline (100) silicon substrate by an orientation dependent etching(ODE) method. Diamond film was grown on V-grooved silicon substrate by chemical vapor deposition(CVD). Diamond field emitter arrays were formed by etching silicon substrates. I-V characteristics of the fabricated diamond field emitter arrays under 2 × 10^<-6> Torr showed very sharp turn- on characteristics. It is found from experiment that the transfer mold technique can be used for the fabrication of diamond field emitter arrays. It may be possible to use the strip-shaped diamond field emitter arrays for the field emission display(FED) applications.
- 社団法人電子情報通信学会の論文
- 1995-10-24
著者
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Ju B
Korea Institute Of Science And Technology
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Ju Byeong
Division Of Electronics And Information Technology Kist
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Kim Seong-Jin
Division of Electronics and Information Technology, KIST
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Jung Jae-Hoon
Division of Electronics and Information Technology, KIST
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Park Beom
Division of Ceramics, KIST
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Baik Young-Joon
Division of Ceramics, KIST
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Lim Sung-Kyoo
Department of Electronics Engineering, Dankook University
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Oh Myung
Division of Electronics and Information Technology, KIST
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Kim S‐j
Pohang Univ. Sci. And Technol. Kyungbuk Kor
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Jung J‐h
Display Device Research Lab. Lg Electronics Lnc.
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Lim Sung-kyoo
Department Of Electronics Engineering Dankook University
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Oh M
Korea Institute Of Science And Technology
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Oh M
Samsung Electronics Kyoungi‐do Kor
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Oh Myung
Division Of Electronics And Information Technology Kist
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Oh Myung
Division Of Applied Science And Engineering
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Park Beom
Division Of Ceramics Kist
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Jung Jae-hoon
Division Of Electronics And Information Technology Kist
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Kim Seong-jin
Division Of Electronics And Information Technology Kist
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Baik Young-joon
Division Of Ceramics Kist
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