Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy Observation of III-V Compound Semicomductor Nanostructures
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-06-30
著者
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Kim S‐j
Pohang Univ. Sci. And Technol. Kyungbuk Kor
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Kim Seong-jin
Division Of Electronics And Information Technology Kist
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NOH Joo-Hyong
Yokogawa Electric Corporation
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KIM Seong-Jin
The Institute of Scientific and Industrial Research, Osaka University
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ASAHI Hajime
The Institute of Scientific and Industrial Research, Osaka University
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GONDA Shun-ichi
The Institute of Scientific and Industrial Research, Osaka University
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NOH Joo-Hyong
The Institute of Scientific and Industrial Research, Osaka University
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TAKEMOTO Minori
The Institute of Scientific and Industrial Research, Osaka Unversity
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Noh J‐h
Yokohama National Univ. Yokohama Jpn
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Kim Seong-jin
The Institute Of Scientific And Industrial Research Osaka University:(present Address) Electrotechni
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Noh Joo-hyong
The Institute Of Scientific And Industrial Research Osaka University
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Kim S‐j
National Institute For Material Science (nims):new Industry Creation Hatchery Center (niche) Tohoka
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Asahi H
Osaka Univ. Osaka Jpn
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Asahi Hajime
The Institute Of Scientific And Industrial Research Osaha University
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Gonda S
The Institute Of Scientific And Industrial Research Osaka University
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Gonda Shun-ichi
The Institute Of Scientific And Industrial Research Osaka University
関連論文
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- Fabrication and Characterization of Strip-shaped Diamond Field Emitter Arrays
- Electroabsorptive Properties of InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well (FACQW)
- CuAu-Type Ordering Self-formed by Growing GaP/InP Short-Period Superlattices on GaAs (011) Substrate
- Straight Quantum Wires Self-Formed by Growing GaP/InP Short-Period Superlattices on GaAs(011) Substrate
- Improved Optical Properties of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices
- Scanning Tunneling Microscopy Study on Self-Formation Process of Quantum Dot Structures by the Growth of GaP/InP Short-Period Superlattices on GaAs(311)A Substrate
- Vertical Quantum Confinement Effect on Optical Properties of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices
- Scanning Tunneling Microscopy/Spectroscopy Study of Self-Organized Quantum Dot Structures Formed in GaP/InP Short-Period Superlattices ( Scanning Tunneling Microscopy)
- Gas Source Molecular Beam Epitaxy Growth of GaN-Rich Side of GaNP Alloys and Their Observation by Scanning Tunneling Microscopy ( Scanning Tunneling Microscopy)
- Self-Organized Dot/Columnar Structures and Quasi-Perfect CuPt-Type Ordering in (GaP)_n(InP)_n Superlattices Grown on GaAs (N11) Substrates by Gas Source Molecular Beam Epitaxy
- Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy Observation of III-V Compound Semicomductor Nanostructures
- Observation of Giant Electrorefractive Effect in Five-Layer Asymmetric Coupled Quantum Wells (FACQWs)
- Fabrication and Optical Characterization of Five-Layer Asymmetric Coupled Quantum Well (FACQW)
- Substrate Orientation Dependence of Optical Properties of GaP/AlP Short-Period Superlattices
- Photoluminescence Wavelength Dependence on Layer Structure of GaP/AlP Modulated Superlattices
- Improvement of Optical Properties of Multilayer Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices on GaAs(311)A
- Time-Resolved Photoluminescence Study of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattice
- Growth Temperature Dependence of Self-Formation Process of Quantum Dot Structures in GaP/InP Short-Period Superlattices Grown on GaAs (311)A Substrate
- Possibility for the Discrimination of Submonolayer InAs and GaAs Grown on Tilted GaAs Substrate
- Formation of a High-Electrical-Resistance Region in InP by Ga Ion Implantation
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- Preparation of Ultrafine Crystalline TiO_2 Powders from Aqueous TiCl_4 Solution by Precipitation
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- Sub-Nanometer Scale Measurements of Silicon Oxide Thickness by Spectroscopic Ellipsometry
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- Improved Growth Kinetic Model for Metalorganic Molecular Beam Epitaxy Using Triethylgallium
- Selective Area Epitaxy of GaSb by Metal-Organic Molecular Beam Epitaxy
- Development of 3D Focused-Ion-Beam (FIB) Etching Methods for Fabricating Micro- and Nanodevices
- Growth and Superconductivity of (BiPb)_2Sr_2Ca_2Cu_3O_ Single-Crystal Whiskers : Superconductors
- Electron-Beam-Damaged YBa_2Cu_3O_ Josephson Junctions for High-Frequency Device Applications(Special Issue on Superconductive Electron Devices and Their Applications)
- Growth of InMnAsSb:InSb Heterostructures with Mid-Infrared-Light-Induced Ferromagnetic Properties
- Current Injection Laser Operation of GaAs/InAs Short-Period Superlattice/InP(411) Quantum Dot Laser Diodes with InAlAs Current Blocking Layer
- 1.3-1.5-μm-Wavelength GaAs/InAs Superlattice Quantum-Dot Light-Emitting Diodes Grown on InP (411)A Substrates
- 1.3-1.6-μm-Wavelength Quantum Dots Self-Formed in GaAs/InAs Short-Period Superlattices Grown on InP (411)A Substrates : Semiconductors
- Electrooptic Characterization of Five-Layer Asymmetric Coupled Quantum Well
- Influence of One Monolayer Thickness Variation in GaAs/AlGaAs Five-Layer Asymmetric Coupled Quantum Well upon Electrorefractive Index Change
- Anomalous Sharp Dip of Large Field-Induuced Refractive Index Change in GaAs/AlGaAs Five-Layer Asymmetric Coupled Quantum Well
- Field Emission from Polycrystalline GaN Grown on Mo Substrate : Semiconductors
- High Quality GaN Growth on (0001) Sapphire by Ion-Removed Electron Cyclotron Resonance Molecular Beam Epitaxy and First Observation of (2×2) and (4×4) Reflection High Energy Electron Diffraction Patterns
- Observation of Low Chirp Modulation in Long Wavelength InGaAs/InAlAs Multiple-Quantum-Well Optical Modulators
- Temperature-Stable Wavelength TlInGaAs/InP Double Heterostructure Light-Emitting Diodes Grown by Gas Source Molecular Beam Epitaxy
- Gas Source Molecular Beam Epitaxy Growth of TlInGaAs Layers on GaAs Substrates
- Growth of TlInGaAs on InP by Gas-Source Molecular Beam Epitaxy
- GaN-Rich Side of GaNAs Grown by Gas Source Molecular Beam Epitaxy
- Gas Source Molecular Beam Epitaxy Growth of GaN on C-, A-, R- and M-Plane Sapphire and Silica Glass Substrates
- Gas Source Molecular Beam Epitaxial Growth of GaN_P_x (x ≦ 0.015) Using Ion-Removed Electron Cyclotron Resonance Radical Cell
- Reliability of parameters of associated base straight line in step height samples : Uncertainty evaluation in step height measurements using nanometrological AFM
- Observation of Room Temperature Current Oscillation in InGaAs/InAlAs MQW Pin Diodes
- New III-V Compound Semiconductors TlInGaP for 0.9 μm to over 10 μm Wavelength Range Laser Diodes and Their First Successful Growth
- Magnetic Properties of Eu-Doped GaN Grown by Molecular Beam Epitaxy
- In-Situ Selective Area Etching of GaAs in Metalorganic Molecular Beam Epitaxy Chamber using Trisdimethylaminoarsenic
- Anisotropy and Effective Charges in the Vibrational Spectra of Rhombohedral Boron-Rich Solids
- Current Injection Laser Oscillation in TlInGaAs/GaAs Double Quantum Well Diodes with InGaP Cladding Layers
- Growth and Characterization of GaCrN/AlGaN/GaCrN Trilayer Structures
- Nature of Deep-Level Defects in GaCrN Diluted Magnetic Semiconductor
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- Infrared and Raman Study of Plasma-Deposited Amorphous B_C_x Films
- Composition Analysis of High-Stable Transparent Conductive Zinc Oxide by X-ray Photoelectron Spectroscopy and Secondary Ion Mass Spectroscopy
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- Evaluation of Device Configurations through Cross-Sectional Planes along Gates of 0.1 μm Metal–Oxide–Semiconductor Field-Effect Transistors by Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy
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- Current Injection Laser Oscillation in TlInGaAs/GaAs Double Quantum Well Diodes with InGaP Cladding Layers
- In-Situ Selective Area Etching of GaAs in Metalorganic Molecular Beam Epitaxy Chamber using Trisdimethylaminoarsenic
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