Asahi Hajime | The Institute Of Scientific And Industrial Research Osaha University

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著作論文

CuAu-Type Ordering Self-formed by Growing GaP/InP Short-Period Superlattices on GaAs (011) Substrate
Straight Quantum Wires Self-Formed by Growing GaP/InP Short-Period Superlattices on GaAs(011) Substrate
Improved Optical Properties of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices
Scanning Tunneling Microscopy Study on Self-Formation Process of Quantum Dot Structures by the Growth of GaP/InP Short-Period Superlattices on GaAs(311)A Substrate
Vertical Quantum Confinement Effect on Optical Properties of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices
Scanning Tunneling Microscopy/Spectroscopy Study of Self-Organized Quantum Dot Structures Formed in GaP/InP Short-Period Superlattices ( Scanning Tunneling Microscopy)
Gas Source Molecular Beam Epitaxy Growth of GaN-Rich Side of GaNP Alloys and Their Observation by Scanning Tunneling Microscopy ( Scanning Tunneling Microscopy)
Self-Organized Dot/Columnar Structures and Quasi-Perfect CuPt-Type Ordering in (GaP)_n(InP)_n Superlattices Grown on GaAs (N11) Substrates by Gas Source Molecular Beam Epitaxy
Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy Observation of III-V Compound Semicomductor Nanostructures
Substrate Orientation Dependence of Optical Properties of GaP/AlP Short-Period Superlattices
Photoluminescence Wavelength Dependence on Layer Structure of GaP/AlP Modulated Superlattices
Improvement of Optical Properties of Multilayer Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices on GaAs(311)A
Time-Resolved Photoluminescence Study of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattice
Growth Temperature Dependence of Self-Formation Process of Quantum Dot Structures in GaP/InP Short-Period Superlattices Grown on GaAs (311)A Substrate
Possibility for the Discrimination of Submonolayer InAs and GaAs Grown on Tilted GaAs Substrate
Formation of a High-Electrical-Resistance Region in InP by Ga Ion Implantation
TlGaP Layers Grown on GaAs Substrates by Gas Source Molecular Beam Epitaxy
Improved Growth Kinetic Model for Metalorganic Molecular Beam Epitaxy Using Triethylgallium
Selective Area Epitaxy of GaSb by Metal-Organic Molecular Beam Epitaxy
Growth of InMnAsSb:InSb Heterostructures with Mid-Infrared-Light-Induced Ferromagnetic Properties
1.3-1.6-μm-Wavelength Quantum Dots Self-Formed in GaAs/InAs Short-Period Superlattices Grown on InP (411)A Substrates : Semiconductors
Field Emission from Polycrystalline GaN Grown on Mo Substrate : Semiconductors
High Quality GaN Growth on (0001) Sapphire by Ion-Removed Electron Cyclotron Resonance Molecular Beam Epitaxy and First Observation of (2×2) and (4×4) Reflection High Energy Electron Diffraction Patterns
Temperature-Stable Wavelength TlInGaAs/InP Double Heterostructure Light-Emitting Diodes Grown by Gas Source Molecular Beam Epitaxy
Gas Source Molecular Beam Epitaxy Growth of TlInGaAs Layers on GaAs Substrates
Growth of TlInGaAs on InP by Gas-Source Molecular Beam Epitaxy
GaN-Rich Side of GaNAs Grown by Gas Source Molecular Beam Epitaxy
Gas Source Molecular Beam Epitaxy Growth of GaN on C-, A-, R- and M-Plane Sapphire and Silica Glass Substrates
Gas Source Molecular Beam Epitaxial Growth of GaN_P_x (x ≦ 0.015) Using Ion-Removed Electron Cyclotron Resonance Radical Cell
New III-V Compound Semiconductors TlInGaP for 0.9 μm to over 10 μm Wavelength Range Laser Diodes and Their First Successful Growth
Magnetic Properties of Eu-Doped GaN Grown by Molecular Beam Epitaxy
In-Situ Selective Area Etching of GaAs in Metalorganic Molecular Beam Epitaxy Chamber using Trisdimethylaminoarsenic
Current Injection Laser Oscillation in TlInGaAs/GaAs Double Quantum Well Diodes with InGaP Cladding Layers
Growth and Characterization of GaCrN/AlGaN/GaCrN Trilayer Structures
Nature of Deep-Level Defects in GaCrN Diluted Magnetic Semiconductor
1.3–1.5-μm-Wavelength GaAs/InAs Superlattice Quantum-Dot Light-Emitting Diodes Grown on InP (411)A Substrates
Composition Analysis of High-Stable Transparent Conductive Zinc Oxide by X-ray Photoelectron Spectroscopy and Secondary Ion Mass Spectroscopy
Epitaxial Growth of Ferromagnetic Cubic GaCrN on MgO Substrate
Evaluation of Device Configurations through Cross-Sectional Planes along Gates of 0.1 μm Metal–Oxide–Semiconductor Field-Effect Transistors by Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy
Current Injection Laser Operation of GaAs/InAs Short-Period Superlattice/InP(411) Quantum Dot Laser Diodes with InAlAs Current Blocking Layer
Growth and Characterization of GaN Nanostructures toward Electron Field Emitter Application (SELECTED TOPICS IN APPLIED PHYSICS : Nano Electronics and Devices : Characterization and Control of Nano Surfaces and Interfaces)
Growth and Characterization of GaN Nanostructures toward Electron Field Emitter Application
Current Injection Laser Oscillation in TlInGaAs/GaAs Double Quantum Well Diodes with InGaP Cladding Layers
In-Situ Selective Area Etching of GaAs in Metalorganic Molecular Beam Epitaxy Chamber using Trisdimethylaminoarsenic

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