Okuno Yasutoshi | ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corp., 19, Nishikujo-kasuga cho, Minami-ku, Kyoto 601-8413, Japan
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概要
- 同名の論文著者
- ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corp., 19, Nishikujo-kasuga cho, Minami-ku, Kyoto 601-8413, Japanの論文著者
関連著者
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Okuno Yasutoshi
Lsi Manufacturing Technology Unit Wafer Process Engineering Development Division Renesas Technology
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奥野 泰利
日本テキサスインスツルメンツ(株)、ulsi技術開発センター
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Okuno Yasutoshi
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corp., 19, Nishikujo-kasuga cho, Minami-ku, Kyoto 601-8413, Japan
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Okuno Y
Lsi Manufacturing Technology Unit Wafer Process Engineering Development Division Renesas Technology
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奥野 泰利
松下電器産業(株)
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Mori Yoshihiro
Ulsi Process Technology Development Center Matsushita Electronics Corporation
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OKUNO Yasutoshi
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corp.
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Tsuzumitani Akihiko
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electric Industrial Co.
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Mori Y
Research Center For Ultra-precision Science And Technology Graduate School Of Engineering Osaka Univ
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Mori Yusuke
Graduate School of Engineering, Osaka University
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Mori Yoshihiro
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corp.
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TSUZUMITANI Akihiko
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electric Industrial Co
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SHIMIZU Tadami
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corporatio
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Mori Y
Osaka Univ. Suita Jpn
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Tsuzumitani Akihiko
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corporation
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Mori Yuzo
Department Of Mechanical Engineering Kochi National College Of Technology
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Shibata Jun
Ulsi Process Technology Development Center Matsushita Electronics Corporation
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Yamamoto Kazuhiko
ULSI Process Technology Development Center, Matsushita Electric Industrial Co., Ltd.
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Yamamoto K
Kobayasi Institute Of Physical Research
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Shibata J
Japan Fine Ceramic Center Nagoya Jpn
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ASAHI Hajime
The Institute of Scientific and Industrial Research, Osaka University
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GONDA Shun-ichi
The Institute of Scientific and Industrial Research, Osaka University
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SHIBATA Jun
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corporatio
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YAMAMOTO Kazuhiko
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corporatio
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Shimizu T
Univ. Occupational And Environmental Health Jpn
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Shimizu Tadao
Department Of Physics University Of Tokyo
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Shimizu T
Department Of Electrical And Electronic Engineering Kanazawa University
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Yamamoto K
Storage Media Systems Development Center Matsushita Elec. Ind. Co. Ltd.
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OKUNO Yasutoshi
The Institute of Scientific and Industrial Research, Osaka University
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Shimizu T
Faculty Of Engineering Chiba University
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Asahi H
Osaka Univ. Osaka Jpn
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Asahi Hajime
The Institute Of Scientific And Industrial Research Osaha University
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Gonda S
The Institute Of Scientific And Industrial Research Osaka University
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Shimizu T
Chiba Univ. Chiba Jpn
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Gonda Shun-ichi
The Institute Of Scientific And Industrial Research Osaka University
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Ogawa Hisashi
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electric Industrial Co.
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Yamamoto Kazuhiko
ULSI Process Technology Development Center, Matsushita Electric Industrial Co., Ltd., 19 Nishikujo-Kasugacho, Minami-ku, Kyoto 601-8413, Japan
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朝日 一
大阪大学産業科学研究所
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権田 俊一
大阪大学産業科学研究所
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Fukuda Y
Texas Instruments Tsukuba Res. And Dev. Center Ltd. Ibaraki Jpn
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Fukuda Y
Department Of Physics Faculty Of Science Kobe University
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福田 幸夫
(株)テキサスインスツルメンツ筑波研究開発センター
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Fukuda Yukio
Texas Instruments Tukuba Research & Development Center Limited
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Kakimi A
Texas Instruments Tsukuba Res. And Dev. Center Ltd. Ibaraki Jpn
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OHNO Yoshikazu
LSI Manufacturing Technology Unit, Wafer Process Engineering Development Division, Renesas Technolog
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YONEDA Masahiro
LSI Manufacturing Technology Unit, Wafer Process Engineering Development Division, Renesas Technolog
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OGAWA Hisashi
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corp.
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DORNFEST Charles
Applied Materials
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JIN Xiaoliang
Applied Materials
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KHER Shreyas
Applied Materials
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TAO Jerry
Applied Materials
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WANG Yaxin
Applied Materials
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ZHAO Jun
Applied Materials
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Yutani Akie
Lsi Manufacturing Technology Unit Wafer Process Engineering Development Division Renesas Technology
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青木 克裕
(株)テキサスインスツルメンツ筑波研究開発センター
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AOKI Katsuhiro
Texas Instruments Tsukuba Research and Development Center, Limited
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Okudaira Tomonori
Lsi Manufacturing Technology Unit Wafer Process Engineering Development Division Renesas Technology
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Shinkawata Hiroki
Lsi Manufacturing Technology Unit Wafer Process Engineering Development Division Renesas Technology
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Mazumder Motaharul
Lsi Manufacturing Technology Unit Wafer Process Engineering Development Division Renesas Technology
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Kashihara Keiichiro
Lsi Manufacturing Technology Unit Wafer Process Engineering Development Division Renesas Technology
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Tsunemine Yoshikazu
Lsi Manufacturing Technology Unit Wafer Process Engineering Development Division Renesas Technology
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森 義弘
松下電器産業(株)
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森 義弘
松下電器産業
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KANEKO Tadaaki
The Institute of Scientific and Industrial Research, Osaka University
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LIU Xuefeng
The Institute of Scientific and Industrial Research, Osaka University
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INOUE Keishi
The Institute of Scientific and Industrial Research, Osaka University
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Numata K
The Authors Are With Memory Research & Development Center Texas Instruments Inc.
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沼田 乾
日本テキサスインスツルメンツ(株)、ulsi技術開発センター
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Liu X
Shanghai Inst. Technical Physics Of Chinese Acad. Sci. Shanghai Chn
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Inoue Keishi
The Institute Of Scientific And Industrial Research Osaka University
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Ogawa Hisashi
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corp.
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Kaneko Tadaaki
The Institute Of Scientific And Industrial Research Osaka University
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Aoki Katsuhiro
Texas Instruments Tsukuba Research & Development Center Limited
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Shimizu Tatsuo
Faculty Of Technology
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Nishimura Akitoshi
The Authors Are With Memory Research & Development Center Texas Instruments Inc.
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西村 明俊
日本テキサスインスツルメンツ(株)、ulsi技術開発センター
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NUMATA Ken
Texas Instruments Japan, ULSI Technology Center
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OKUNO Yasutoshi
Texas Instruments Japan, ULSI Technology Center
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NISHIMURA Akitoshi
Texas Instruments Japan, ULSI Technology Center
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Fukuda Yukio
Texas Instruments Tsukuba Research & Development Center Limited
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福田 幸夫
日本テキサスインスツルメンツ(株)、ULSI技術開発センター
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青木 克裕
日本テキサスインスツルメンツ(株)、ULSI技術開発センター
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皷谷 昭彦
松下電器産業(株)
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小川 久
松下電器産業(株)
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Shimizu Tadao
Department Of Industrial Chemistry Chiba Institute Of Technology
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Shimizu Tadao
Department Of Physics Faculty Of Science The University Of Tokyo
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皷谷 昭彦
松下電器産業
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奥野 泰利
大阪大学産業科学研究所
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金子 忠昭
大阪大学産業科学研究所
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井谷 康志
大阪大学産業科学研究所
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Okudaira Tomonori
LSI Manufacturing Technology Unit, Wafer Process Engineering Development Division, Renesas Technology Corp., 4-1, Mizuhara, Itami, Hyogo 664-0005, Japan
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Tsunemine Yoshikazu
LSI Manufacturing Technology Unit, Wafer Process Engineering Development Division, Renesas Technology Corp., 4-1, Mizuhara, Itami, Hyogo 664-0005, Japan
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Mazumder Motaharul
LSI Manufacturing Technology Unit, Wafer Process Engineering Development Division, Renesas Technology Corp., 4-1, Mizuhara, Itami, Hyogo 664-0005, Japan
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Shinkawata Hiroki
LSI Manufacturing Technology Unit, Wafer Process Engineering Development Division, Renesas Technology Corp., 4-1, Mizuhara, Itami, Hyogo 664-0005, Japan
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Tsuzumitani Akihiko
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corp., 19, Nishikujo-kasuga cho, Minami-ku, Kyoto 601-8413, Japan
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Ogawa Hisashi
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corp., 19, Nishikujo-kasuga cho, Minami-ku, Kyoto 601-8413, Japan
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Ohno Yoshikazu
LSI Manufacturing Technology Unit, Wafer Process Engineering Development Division, Renesas Technology Corp., 4-1, Mizuhara, Itami, Hyogo 664-0005, Japan
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Yoneda Masahiro
LSI Manufacturing Technology Unit, Wafer Process Engineering Development Division, Renesas Technology Corp., 4-1, Mizuhara, Itami, Hyogo 664-0005, Japan
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Shimizu Tadami
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corporation, 19 Nishikujo-kasugacho, Minami-ku, Kyoto 601-8413, Japan
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Tsuzumitani Akihiko
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corporation, 19 Nishikujo-kasugacho, Minami-ku, Kyoto 601-8413, Japan
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Mori Yoshihiro
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corporation, 19 Nishikujo-kasugacho, Minami-ku, Kyoto 601-8413, Japan
著作論文
- Low Temperature BST-CVD Process for the Concave-Type Capacitors Designed for Logic-Base-Embedded DRAMs
- Extendibility of Ta_2O_5 Metal-Insulator-Metal Capacitor Using Ru Electrode
- Ru-Ta_2O_5MIM Capacitor toward 0.1μm DRAM Cell
- Improved Growth Kinetic Model for Metalorganic Molecular Beam Epitaxy Using Triethylgallium
- Selective Area Epitaxy of GaSb by Metal-Organic Molecular Beam Epitaxy
- Influence of the Relaxation Current in Ba_xSr_lt(1-x)gtTiO_3 Thin Film Capacitors on DRAM Operation
- セルキャパシター誘電体としてのBa_xSr_TiO_3が有する21世紀のDRAMに対する影響 : DRAMセルキャパシター構造の簡略化を指向した高誘電体薄膜の開発
- 混載DRAM用低温BST-CVDキャパシタ開発
- MOMBE法によるAIGaSbの成長
- Pt/BaxSr(1-x)TiO3/Pt Capacitor Technology for 0.15 μm Embedded Dynamic Random Access Memory
- Extendibility of Ta2O5 Metal-Insulator-Metal Capacitor Using Ru Electrode