Kakimi A | Texas Instruments Tsukuba Res. And Dev. Center Ltd. Ibaraki Jpn
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概要
関連著者
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Kakimi A
Texas Instruments Tsukuba Res. And Dev. Center Ltd. Ibaraki Jpn
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Fukuda Y
Texas Instruments Tsukuba Res. And Dev. Center Ltd. Ibaraki Jpn
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Fukuda Y
Department Of Physics Faculty Of Science Kobe University
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Nishimura Akitoshi
The Authors Are With Memory Research & Development Center Texas Instruments Inc.
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Numata K
The Authors Are With Memory Research & Development Center Texas Instruments Inc.
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FUKUDA Yukio
ULSI Technology Center, Texas Instruments Japan Limited
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AOKI Katsuhiro
ULSI Technology Center, Texas Instruments Japan Limited
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NISHIMURA Akitoshi
ULSI Technology Center, Texas Instruments Japan Limited
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NUMATA Ken
ULSI Technology Center, Texas Instruments Japan Limited
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Okamura S
Nara Inst. Sci. And Technol. (naist) Nara Jpn
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Okamura Soichiro
Department Of Applied Physics Faculty Of Science Science University Of Tokyo
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Tsukamoto Takeyo
Department Of Applied Physics Faculty Of Science Science University Of Tokyo
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Tsukamoto T
Department Of Applied Physics Tokyo University Of Science
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Tsukamoto T
Toshiba Corp. Kawasaki Jpn
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Fukuda Yukio
Texas Instruments Tukuba Research & Development Center Limited
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AOKI Katsuhiro
Texas Instruments Tsukuba Research and Development Center, Limited
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Aoki Katsuhiro
Texas Instruments Tsukuba Research & Development Center Limited
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KAKIMI Atsushi
Department of Applied Physics, Faculty of Science, Science University of Tokyo
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Fukuda Yukio
Texas Instruments Tsukuba Research & Development Center Limited
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Kakimi Atsushi
Department Of Applied Physics Faculty Of Science Science University Of Tokyo
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TSUKAMOTO Takeyo
Department of Applied Physics, Tokyo University of Science
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OKAMURA Soichiro
Department of Applied Physics, Tokyo University of Science
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Ando Shizutoshi
Department Of Applied Physics Faculty Of Science Science University Of Tokyo
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Mori Kazuo
The Institute Of Physical And Chemical Research
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Mori K
Display Device Research And Development Department Nippondenso Co. Ltd.
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Mori K
Matsushita Technoresearch Inc.
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Mori K
Saga Univ. Saga Jpn
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Mori Koichi
Department Of Radiological Sciences Ibaraki Prefectural University Of Health Sciences
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Mori K
Department Of Radiological Sciences Ibaraki Prefectural University Of Health Sciences
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ANDO Shizutoshi
Department of Electrical Engineering, Faculty of Engineering, Science University of Tokyo
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NUMATA Ken
Texas Instruments Japan, ULSI Technology Center
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NISHIMURA Akitoshi
Texas Instruments Japan, ULSI Technology Center
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NISHIMURA Akitoshi
Memory Research and Development Center, Texas Instruments Incorporated
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Yagi Y
Electrotechnical Lab. Ibaraki Jpn
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SAKAGUCHI Isao
National Institute for Materials Science
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Okuno Yasutoshi
Lsi Manufacturing Technology Unit Wafer Process Engineering Development Division Renesas Technology
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HANEDA Hajime
Sensor Materials Center, National Institute for Materials Science
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MORI Katsumi
Department of Health Promotion Science, Graduate School of Medicine, The University of Tokyo
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HANEDA Hajime
National Institute for Materials Science
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Okuno Y
Lsi Manufacturing Technology Unit Wafer Process Engineering Development Division Renesas Technology
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Aoki Katsuhiro
The Authors Are With Texas Instruments Tsukuba Research & Development Center Ltd.
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Haneda Hajime
National Institute For Research In Inorganic Materials
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Haneda Hajime
National Institute For Material Science
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Haneda Hajime
Advanced Materials Laboratory National Institute For Materials Science (nims)
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Sakaguchi I
Optical Materials Center National Inst. For Materials Sci.
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Sakaguchi Isao
National Inst. Materials Sci. Ibaraki Jpn
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Fukuda Yukio
The Authors Are With Texas Instruments Tsukuba Research & Development Center Ltd.
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OKUNO Yasutoshi
Texas Instruments Japan, ULSI Technology Center
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NUMATA Ken
Memory Research and Development Center, Texas Instruments Incorporated
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FUJIHASHI Gaku
Department of Applied Physics, Faculty of Science, Science University of Tokyo
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YAGI Yukie
Department of Electronics and Computer Science, Faculty of Science and Engineering, Science Universi
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奥野 泰利
日本テキサスインスツルメンツ(株)、ulsi技術開発センター
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奥野 泰利
松下電器産業(株)
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Fujihashi Gaku
Department Of Applied Physics Faculty Of Science Science University Of Tokyo
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YAGI Yukie
Yamaguchi College, Science University of Tokyo
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MORI Katsumi
Yamaguchi College, Science University of Tokyo
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NUMATA Ken
The authors are with Memory Research & Development Center, Texas Instruments, Inc.
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MURAYAMA Ikuko
Memory Research & Development Center, Texas Instruments, Inc.
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Murayama Ikuko
Memory Research & Development Center Texas Instruments Inc.
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Mori Katsumi
Department Of Electronics And Computer Science Faculty Of Science And Engineering Science University
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Mori Katsumi
Yamaguchi College Science University Of Tokyo
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Okuno Yasutoshi
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corp., 19, Nishikujo-kasuga cho, Minami-ku, Kyoto 601-8413, Japan
著作論文
- Influence of the Relaxation Current in Ba_xSr_lt(1-x)gtTiO_3 Thin Film Capacitors on DRAM Operation
- Effects of Postannealing in Oxygen Ambient on Leakage Properties of (Ba, Sr)TiO_3 Thin-Film Capacitors
- Crystallization of Precursor Micropatterns of Ferroelectric Bi_4Ti_3O_ Fabricated by Electron Beam Scanning
- Fabrication of Ferroelectric Bi_4Ti_3O_ Thin Films by Dipping Pyrolysis of Metal Naphthenates and Micropatterns by an Electron Beam ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Formation of Reliable Pb(Ti, Zr)O_3 Thin-Film Capacitors for Read/Write Endurance of Ferroelectric Non-volatile Memories(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Dielectric Properties of (Ba, Sr)TiO_3 Thin Films and their Correlation with Oxygen Vacancy Density
- Characterization of a Sol-Get Derived Pb(Zr, Ti)0_3 Thin-Film Capacitor with Polycrystalline SrRu0_3 Electrodes
- Origin of Dielectric Relaxation Observed for Ba_Sr_TiO_3 Thin-Film Capacitor
- Electrode Dependences of Switching Endurance Properties of Lead-Zirconate-Titanate Thin-Film Capacitors
- Temperature Dependence of Dielectric Absorption Current of SrTiO_3 Thin-Film Capacitor
- Electrical Comparison of Sol-Gel Derived Lead-Zirconate-Titanate Capacitors with Ir and Pt Electrodes
- Analysis of the Resistance Degradation of SrTiO_3 and Ba_xSr_TiO_3 Thin Films
- Ferroelectric Properties of Crystalline-Oriented Lead-Zirconate-Titanates Formed by Sol-Gel Deposition Technique
- Effects of Titanium Buffer Layer on Lead-Zirconate-Titanate Crystallization Processes in Sol-Gel Deposition Technique
- Current-Voltage Characteristics of Electron-Cyclotron-Resonance Sputter-Deposited SrTiO_3 Thin Films ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Dielectric Properties of (111) and (100) Lead-Zirconate-Titanate Films Prepared by Sol-Gel Technique ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Preparation of -oriented Lead-Zirconate-Titanate Films by Sol-Get Technique
- Effects of O_2 Gas Pressure in Heat Treatment on Surface Morphology and Electric Properties of Ferroelectric Bi_4Ti_3O_ Thin Films with c-Axis Orientation
- O_2 Gas Pressure Effects on Surface Morphology in Ferroelectric Bi_4Ti_3O_ Thin Films Fabricated by Spin-Coating Pyrolysis